Influence of Mo doping on transparent conducting properties of ZnO films prepared by a simplified spray technique

Ravichandran, K.; Anbazhagan, A.; Dineshbabu, N.; Ravidhas, C.

doi:10.1007/s10854-015-3404-6

Cited by 10 publications

(3 citation statements)

References 32 publications

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“…The E exc intensity ratio in the as-grown ZnO:Mo(0.05, 0.25 and 1%) is 1:2:1. Mo acts as a donor in ZnO [ 20 , 27 , 28 ]. Its 4d levels appear below the bottom of the conduction band mixing with the exciton states [ 20 ].…”

Section: Resultsmentioning

confidence: 99%

“…The latter could be, for instance, of the donor property serving as effective suppliers of free electrons. Molybdenum with the 3+–6+ row of charge states is an eligible candidate in this case since its improvement of the conductivity of ZnO:Mo nanorods and thin films has previously been observed [ 20 , 27 , 28 ]. In the past decade post-growth treatment, for example, annealing in air or exposure to hydrogen or oxygen plasma, has appeared the most efficient tool for the moderation of ZnO properties [ 13 , 14 , 19 , 20 , 21 , 29 , 30 , 31 , 32 ].…”

Section: Introductionmentioning

confidence: 99%

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Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

et al. 2022

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Cationic doping of ZnO nanorods has gained increased interest as it can lead to the production of materials with improved luminescent properties, electrical conductivity and stability. We report on various Mo-doped ZnO powders of nanorods synthesized by the hydrothermal growth method. Further annealing or/and cold hydrogen or oxygen plasma modification was applied. The atomic structure of the as-grown and plasma-modified rods was characterized by X-ray diffraction. To identify any possible changes in morphology, scanning electron microscopy was used. Paramagnetic point defects were investigated by electron paramagnetic resonance. In particular, two new types of defects were initiated by the plasma treatment. Their appearance was explained, and corresponding mechanisms were proposed. The changes in the luminescence and scintillation properties were characterized by photo- and radioluminescence, respectively. Charge trapping phenomena were studied by thermally stimulated luminescence. Cold plasma treatment influenced the luminescence properties of ZnO:Mo structures. The contact with hydrogen lead to an approximately threefold increase in intensity of the ultraviolet exciton-related band peaking at ~3.24 eV, whereas the red band attributed to zinc vacancies (~1.97 eV) was suppressed compared to the as-grown samples. The exciton- and defect-related emission subsided after the treatment in oxygen plasma.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

et al. 2022

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“…Numerous deposition techniques have been employed for the fabrication of zinc oxide thin films such as electron beam evaporation, sol-gel process, pulsed laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD) etc. Of these techniques, simplified spray pyrolysis is a low cost and large area deposition technique which yields good quality zinc oxide thin films [7]. The spray-pyrolysis technique has been successfully applied to synthesize ZnO thin films and analyzed their growing characteristics, atomic composition, surface morphology, microstructure and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Investigation Studies of Pure and 2, 4, 6 & 8 at.% of Molybdenum Doped Zinc Oxide (ZnO, Mo-ZnO) Thin Films Deposited by Spray Pyrolysis Technique for Transparent Conductive Oxides (TCO) Applications

Nimalan,

Begam,

Arunachalam

et al. 2024

Preprint

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Pure and molybdenum doped zinc oxide (ZnO, Mo-ZnO) thin films have been deposited on cleaned glass substrate at temperature 450°C using spray pyrolysis technique at different Mo doping (2, 4, 6 & 8 at.% ) concentrations. These films have been analyzed in structural, surface morphological, surface roughness, chemical compositions, optical and electrical studies. Structural analysis in XRD patterns provides that the pure and Mo-ZnO thin films were polycrystalline nature with hexagonal wurtzite structure and has a (0 0 2) plane oriented direction. Surface morphology of the prepared thin films obtained by SEM images provides that the agglomeration of grains with the porous nature which is useful for the photovoltaic applications. AFM observations exposed that the particles size and surface roughness of the prepared films decreased with Mo doping of films increased. Optical measurements indicate that the band gap was decreased with increase in Mo doping and all the prepared films are transparent in visible region, transmission is high for 6 at. % of Mo doped ZnO. The PL studies provides the maximum intensity of UV emission band is 6 at.% Mo content, it shows the improvement of crystallinity. Electrical measurement results provides that the minimum resistivity of 6 at. % of Mo doped film was 1.20 x 10-3Ω cm with increase in the hall mobility, carrier concentration and conductivity. These results make Mo-doped ZnO using a good suitable material for TCO applications.

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Doping Mechanism in Transparent, Conducting Tantalum Doped ZnO Films Deposited Using Atomic Layer Deposition

Gao

Myung

Xing

et al. 2016

Adv Materials Inter

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The effect of tantalum (Ta) addition to ZnO films has been investigated. The films are synthesized using atomic layer deposition. The precursor for Ta is pentakis‐dimethylamino Ta (PDMAT) whereas, diethyl Zn (DEZ) is used for ZnO deposition with H2O as an oxidant. The surface reactions are studied using in situ downstream quadrupole mass spectrometry. X‐ray photoelectron spectroscopy and photoluminescence show that at low Ta doping, oxygen vacancies are eliminated from the film, whereas at higher Ta doping, Zn vacancies are formed. These observations are supported by density functional theory calculations. Hall measurements show the lowest resistivity for a 30 nm Ta doped ZnO film to be 4 × 10−3 Ω cm with a peak carrier concentration of 1.2 × 1020 cm−3. The ideal cycle ratio used to achieve these properties is 40:1 of (DEZ+H2O):(PDMAT+H2O) pulses. Optical measurements show an average transmittance of 85% in the visible regime. The efficiency of Ta doping the ZnO, which represents the fraction of Ta5+ contributing to conductivity, is found to be at least 6.3%.

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Influence of Mo doping on transparent conducting properties of ZnO films prepared by a simplified spray technique

Cited by 10 publications

References 32 publications

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

Investigation Studies of Pure and 2, 4, 6 & 8 at.% of Molybdenum Doped Zinc Oxide (ZnO, Mo-ZnO) Thin Films Deposited by Spray Pyrolysis Technique for Transparent Conductive Oxides (TCO) Applications

Doping Mechanism in Transparent, Conducting Tantalum Doped ZnO Films Deposited Using Atomic Layer Deposition

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Influence of Mo doping on transparent conducting properties of ZnO films prepared by a simplified spray technique

Cited by 10 publications

References 32 publications

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States

Investigation Studies of Pure and 2, 4, 6 &amp; 8 at.% of Molybdenum Doped Zinc Oxide (ZnO, Mo-ZnO) Thin Films Deposited by Spray Pyrolysis Technique for Transparent Conductive Oxides (TCO) Applications

Doping Mechanism in Transparent, Conducting Tantalum Doped ZnO Films Deposited Using Atomic Layer Deposition

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Investigation Studies of Pure and 2, 4, 6 & 8 at.% of Molybdenum Doped Zinc Oxide (ZnO, Mo-ZnO) Thin Films Deposited by Spray Pyrolysis Technique for Transparent Conductive Oxides (TCO) Applications