Influence of Mn doping on CuGaS 2 single crystals grown by CVT method and their characterization

Qin

Physica Status Solidi (a)

et al. 2013

An intermediate‐band (IB) semiconductor CuGa1−xCrxS2 was investigated by the self‐consistent many‐body GW approach (scGW) and further confirmed by the experimental results. The Cr dopant introduced a partially occupied IB, and the density‐of‐states analysis indicates the electron transfer between the impurities and host lattice would suppress the non‐radiative recombination. The CuGa1−xCrxS2 was synthesized by a high‐temperature solid‐state reaction and the X‐ray photoelectron spectroscopy (XPS) indicated the presence of Cr3+. Due to the Cr dopant, two additional absorption responses were directly observed in the UV–Vis–NIR absorption spectrum. The further photocatalytic investigations verified the IB absorptions could produce highly mobile electrons and holes to degrade dyes. This material leads to lower‐energy photon absorption, which could be a promising candidate for the high‐efficiency solar cells.

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Cr incorporation in CuGaS₂ chalcopyrite: A new intermediate‐band photovoltaic material with wide‐spectrum solar absorption

Qin

Physica Status Solidi (a)

et al. 2013

“…Numerous theoretical studies on doping transition metals on chalcopyrite reported IBSC for photovoltaics. Formerly, Ti-CuGaS 2 , Mn-CuGaS 2 , and Cr-CuGaS 2 ,, IB materials were also suggested with partial substitution of dopants for Ga. In the context of Fe, the idea of 0.92 and 1.54 eV transitions, along with a 2.46 eV band gap, theoretically leads to efficiencies of 47% at ideal circumstances under one sun illumination .…”

Section: Introductionmentioning

confidence: 99%

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)₂ Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application

et al. 2023

As a well-explored chalcopyrite material, copper gallium sulfide CGS has been considered a potential material for solar cell absorber layers. However, its photovoltaic attributes still require to be improved. In this research, a novel chalcopyrite material, copper gallium sulfide telluride CGST, has been deposited and verified as a thin film absorber layer to fabricate high-efficiency solar cells by experimental testing and numerical simulations. The results display the intermediate band formation in CGST with incorporation of Fe ions. Electrical studies showed enhancement in mobility from 1.181 to 1.473 cm2 V–1 s–1 and conductivity from 2.182 to 5.952 S cm–1 for pure and 0.08 Fe-substituted thin films. The I–V curves display the photoresponse and ohmic nature of the deposited thin films, and the maximum photoresponsivity (0.109 A W–1) was observed for 0.08 Fe-substituted films. Theoretical simulation of the prepared solar cells was carried out using SCAPS-1D software, and the obtained efficiency displayed an increasing trend from 6.14 to 11.07% as the Fe concentration increased from 0.0 to 0.08. This variation in efficiency is attributed to the decrease in bandgap (2.51–1.94 eV) and the formation of an intermediate band in CGST with Fe substitution, which is evidenced in UV–vis spectroscopy. The above revealed results open the way to 0.08 Fe-substituted CGST as a promising candidate as a thin film absorber layer in solar photovoltaic technology.

“…Tailoring the photonic and electronic properties of PNCs via various surface and internal engineering strategies have aroused tremendous attention for their optoelectric, photovoltaic, and bioanalytical application. − Doping and/or substituting different elements can modulate the energy states and carrier concentration of NCs − and is also a promising internal engineering strategy to tailor the photonic and electronic properties of CsPbX 3 PNCs. − Because of the toxic concern on Pb element, substituting Pb(II) of CsPbBr 3 PNCs with less toxic elements, such as Mn(II) and Sn(II), , has been being extensively carried out. Actually, heteroionic doping and/or substitution can also improve the optoelectric and photovoltaic properties of PNCs via the quenching effect caused by additional trap states. , Zhang demonstrated that partially substituting Pb(II) of CH 3 NH 3 PbI 3 PNCs with Sb(III) can tune their optical band gap from 1.55 to 2.06 eV and promote the electron transport in valance band (VB) to enhance performance of working solar cell by 15% .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Charge Injection and Recombination of CsPbBr₃ Perovskite Nanocrystals upon Internal Heterovalent Substitution

Jia

Hou

et al. 2019

J. Phys. Chem. C

Heterovalent substitution of the Pb(II) cation of CsPbBr 3 perovskite nanocrystals (PNCs) with Sb(III) cation is developed as an internal engineering strategy to tailor their optoelectrical properties. Partially replacing Pb(II)−Br bonds of cubic CsPbBr 3 PNCs with stronger Sb(III)−Br bonds can not only enlarge the band gap and preserve the highly-passivated surface states of parent PNCs but also enable the obtained Sb(III)−CsPbBr 3 PNCs with both blue-shifted and enhanced absorbance, photoluminescence, and electrochemiluminescence as well as boosted electron and hole-injection responses via electrochemical redox. The enhanced absorbance and radiative charge transfer originate from both the increased vacancies in crystals and the impurity states in the band gap of PNCs upon substituting Pb(II) with Sb(III) because the increased vacancies are more favorable to recombine the electrons injected via photoexcitation and/or electrochemical redox, while suitable impurity states in the band gap of PNCs also facilitate electron transfer for charge recombination. Sb(III)−CsPbBr 3 PNCs are promising monochromatic fluorophores and electrochemiluminophores; therefore, judiciously choosing suitable internal-engineering strategy to process PNCs has promise for their extended application.