Influence of Mn and Nb dopants on electric properties of chemical-solution-deposited BiFeO3 films

Abstract

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Improvement of ferroelectric fatigue endurance in multiferroic (Ba0.5Sr0.5)TiO3∕(Bi1.05La0.05)FeO3∕(Ba0.5Sr0.5)TiO3 sandwich structures

“…4,5 Until now, many attempts have been made to improve the multiferroic properties of BFO by substituting ions into the A-site ͑Bi 3+ ͒ and B-site ͑Fe 3+ ͒, such as Mn 2+ , Mn 3+ , Cr 3+ , Nd 3+ , Ti 4+ , and Nb 5+ . [6][7][8][9][10] Among these substitutions, the doping of lanthanum ͑La 3+ ͒ on BFO films ͑Bi, La͒FeO 3 can lead to a reduction of the leakage current, 11 improvement of polarization switching reliability, 12 and suppression of inhomogeneous magnetic spin structure. 13 It was considered that the ferroelectric fatigue is related to the pinning of oxygen vacancies or other point defects during ferroelectric domain switching.…”

Sol-gel synthesis and characterisation of (Nd, Cr) co-doped BiFeO3nanoparticles

“…When the concentration of Cr is 1%, two different slopes are observed in the region of low and high electric fields. At low electric fields, the slope is 0.91 and it corresponds to the grain boundary effect, [35] whereas at high electric fields, the slope is 1.24, which means conduction is a mixture of Ohmic and SCLC. For Cr 3% and 5% co-doping three different slopes are noticed.…”

Synthesis, microstructure and properties of BiFeO₃-based multiferroic materials: A review

“…S. BERNARDO been measured just for Nb-doped BiFeO 3 materials conformed as thin films and, up to date, results are contradictory. For example, whereas some works assert an enhancement of the remnant polarization in comparison with undoped BiFeO 3 thin films prepared by similar methods [141] (although saturated ferroelectric loops are never obtained in those cases), others support that remnant polarization falls off with niobium doping [142]. Apart from niobium, doping with Ti 4+ in the Fe 3+ positions is also a common method used to decrease the electrical conductivity in BiFeO 3 materials [61,62,121,122], although once again some works describe just the opposite effect [139].…”

“…Some authors suggest that small amounts of this dopant decrease the electrical conductivity of BiFeO 3 materials [140,147], but some others describe an increase in conductivity with the increase in the amount of manganese [60,141,148]. For example, Selbach et al [60] reported that, since BiFeO 3 is a p-type semiconductor, doping with Mn 3+ will lead to an increase of the electrical conductivity because the oxygen hyper-stoichiometry produced by the partial oxidation of Mn 3+ to Mn 4+ rises the concentration of cationic vacancies.…”

“…With regards to donor dopants there is a more generalized agreement about their effect in decreasing the electrical conductivity. For example, it has been several times reported in literature that doping with Nb 5+ decreases the electrical conductivity of BiFeO 3 materials [66,118,141]. However, the reasons for this lower conductivity of the doped material have been ascribed to different factors such as a decrease in the oxygen vacancies concentration or a possible niobium segregation at the grain boundaries.…”