Influence of microstructure on the carrier concentration of Mg-doped GaN films

Romano, L. T.; Kneissl, Michael; Northrup, John E.; Walle, Chris G. Van de; Treat, D.W.

doi:10.1063/1.1413222

Cited by 80 publications

(58 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These results are well matched to the previous results, where the hole concentration initially increased with [Mg] and it decreased significantly with further increase in the [Mg]. [13] highest [Mg] and the lowest hole concentration, the current at 0.5 V was measured as 64 μA. It is worth to notice that the non-alloyed Pd/Pt/Au contacts deposited on samples A, B, and C displayed non-linear I-V curves, while I-V curve became linear for the contacts on sample D. This is suggestive of producing the better ohmic contact on sample D having the lowest hole concentration among the samples.…”

Section: Dependence Of Contact Resistivity On Hole Concentrationsupporting

confidence: 93%

Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes

Kwak¹

2012

Semiconductor Laser Diode Technology and Applications

View full text Add to dashboard Cite

Section: Dependence Of Contact Resistivity On Hole Concentrationsupporting

confidence: 93%

Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes

Kwak¹

2012

Semiconductor Laser Diode Technology and Applications

View full text Add to dashboard Cite

“…Chang and co-workers 6 detected Mg accumulation by AES on the surface of GaN with bulk Mg density of 2Ϫ3ϫ10 19 cm Ϫ3 ͑determined by SIMS͒. Romano and co-workers 12 and oxygen concentrations increased near the surface region of Mg-doped GaN. Nakano and Jimbo 13 recently pointed out outdiffusion of Mg to the surface during activation annealing above 800°C.…”

Section: Resultsmentioning

confidence: 99%

Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Hashizume

2003

Journal of Applied Physics

View full text Add to dashboard Cite

Chemical and electronic properties of Mg-doped p-GaN surfaces were systematically investigated by x-ray photoelectron spectroscopy ͑XPS͒ and Auger electron spectroscopy ͑AES͒. The doping density of Mg ranged from 3ϫ10 19 to 9ϫ10 19 cm Ϫ3 . The XPS and AES analyses revealed the accumulation of Mg for all the air-exposed and chemically treated p-GaN surfaces. The apparent density of Mg calculated from the XPS integrated intensity and the AES intensity was more than one order higher than the value in bulk determined by secondary ion mass spectroscopy. Mg accumulation as well as large amounts of oxides made up the disordered region on the p-GaN:Mg surfaces. Large surface band bending of 1.2-1.6 eV was found at the p-GaN surfaces even after treatment in KOH and NH 4 OH solutions, due to the existence of high-density surface states. It was found that electron cyclotron resonance assisted N 2 -plasma treatment at 300°C for 1 min is very effective in removing such surface disordered regions and reducing surface band bending.

show abstract

“…vs. V "Mott-Schottky" plots) is indicative of the net charge type (donor or acceptor) beneath the surface inversion/accumulation layer [10,11]. This "turnover" occurs at lower applied bias shown to produce donors and reduce the free hole concentration; this result has been attributed to the formation of compensating defect complexes (such as Mg-V N ) [32,33] and pyramidal inversion domains [34,35]. TEM studies of Mg-doped InN, InGaN, and GaN have shown that high levels of Mg result in large densities of planar extended defects, which could also be contributing to the n-type conductivity of overdoped films [36][37][38][39].…”

Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

show abstract

Influence of microstructure on the carrier concentration of Mg-doped GaN films

Cited by 80 publications

References 16 publications

Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes

Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes

Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Hole transport and photoluminescence in Mg-doped InN

Contact Info

Product

Resources

About