Influence of Metal–Organic Vapor Phase Epitaxy Reactor Environment on the Silicon Bulk Lifetime

Ohlmann, Jens; Feifel, Markus; Rachow, Thomas; Benick, Jan; Janz, S.; Dimroth, Frank; David, Laurent

doi:10.1109/jphotov.2016.2598254

Cited by 24 publications

(12 citation statements)

References 25 publications

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“…coefficient, but also the combination of polar and non-polar materials and the high sensitivity of silicon to low levels of impurities, remain significant challenges 31 which require further research and development.…”

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confidence: 99%

III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

et al. 2018

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Silicon is the predominant semiconductor in photovoltaics. However, the conversion efficiency of silicon single junction solar cells is intrinsically constrained to 29.4%, and practically limited around 27%. It is nonetheless possible to overcome this limit by combining silicon with high bandgap materials, such as III-V semiconductors, in a multi-junction device. Despite numerous studies tackling III-V/Si integration, the significant challenges associated with this material combination has hindered the development of highly efficient III-V/Si solar cells. Here we demonstrate for the first time a III-V/Si cell reaching similar performances than standard III-V/Ge triple-junctions solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell.The key issues of III-V/Si interface recombination and silicon weak absorption are addressed using polysilicon/SiOx passivating contacts and a novel rear side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a 2-terminal GaInP/GaAs//Si solar cell reaching a 1sun AM1.5g conversion efficiency of 33.3%.

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III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

et al. 2018

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“…[8] However, a relatively high threading dislocation density after lattice grading still limits the performance of III-V on Si solar cells. [9][10][11] Other issues such as the degradation of minority carrier lifetime in Si due to the overgrowth by metalorganic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE) have been studied intensively [12][13][14][15] and can be avoided today. One possibility is applying a SiN x diffusion barrier on the back side of the Si bottom cell to avoid in-diffusion of contaminants from the wafer carrier during high-temperature epitaxy.…”

Section: Introductionmentioning

confidence: 99%

“…One possibility is applying a SiN x diffusion barrier on the back side of the Si bottom cell to avoid in-diffusion of contaminants from the wafer carrier during high-temperature epitaxy. [12] In 1997, Soga et al published an efficiency of 21.2% for a AlGaAs/Si tandem cell measured under AM0 spectral conditions. [16] Under AM1.5g conditions, the best III-V on the Si cell (direct growth) has been a 20.1% efficient GaAsP/Si dual-junction cell by OSU/SolAero/UNSW [17] until now.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

et al. 2019

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III-V on Si multijunction solar cells exceede the efficiency limit of Si singlejunction devices but are often challenged by expensive layer transfer techniques. Here, progress in the development of direct epitaxial growth for GaInP/GaAs/Si triple-junction solar cells is reported. III-V absorbers with a total thickness of 4.9 μm are grown onto a Si bottom cell using metal organic vapor phase epitaxy. A new record efficiency of 22.3% under AM1.5g conditions is reached herein, outperforming the previous value of 19.7%. This improvement is possible through better nucleation conditions for the first GaP layer on Si and consequently the reduction of threading dislocations within the III-V absorbers from 1.4 Â 10 8 to 2.2 Â 10 7 cm À2 . Further efficiency improvements toward 30% require even lower threading dislocation densities in the order of 1 Â 10 6 cm À2 , better light trapping in the Si bottom cell, and a reduction of parasitic absorption within the GaAs y P 1-y graded buffer.

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“…First, the high‐temperature (600–700 °C) processing required for III–V epitaxial layers growth can severely degrade the lifetime of minority carriers in the Si bottom cell. [ 27 ] Such degradation of Si cells during the high‐temperature growth of III–V thin films can be minimized by applying a diffusion barrier, such as Al 2 O 3 /SiN x stacked layers, at the back of the Si cell. [ 28 ] These stacked layers offer a slow rate of surface recombination [ 27 ] while acting as a diffusion barrier against the impurities from the susceptor in the metalorganic vapor‐phase epitaxy (MOVPE) reaction chamber.…”

Section: Sequential Growthmentioning

confidence: 99%

“…[ 27 ] Such degradation of Si cells during the high‐temperature growth of III–V thin films can be minimized by applying a diffusion barrier, such as Al 2 O 3 /SiN x stacked layers, at the back of the Si cell. [ 28 ] These stacked layers offer a slow rate of surface recombination [ 27 ] while acting as a diffusion barrier against the impurities from the susceptor in the metalorganic vapor‐phase epitaxy (MOVPE) reaction chamber. [ 29 ] Second, the difference in thermal expansion coefficients may lead to cracking, bowing, or bending of the III–V on Si as they cool to ambient temperature after high‐temperature growth.…”

Section: Sequential Growthmentioning

confidence: 99%

The Intermediate Connection of Subcells in Si‐based Tandem Solar Cells

Zhang,

Li,

et al. 2023

Small Methods

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Tandem solar cells are rationally designed and fabricated by stacking multiple subcells to achieve power conversion efficiency well above the Shockley‐Queisser (SQ) limit. There is a large selection pool for the subcell candidates, such as Si, III–V, Kesterite, Perovskite, and organic solar cells. A series of different combinations of these subcells have been successfully demonstrated in practical tandem solar cell devices. However, there has not been a systematic summary of how to connect subcells in a tandem solar cell using a practical, cost‐effective, and efficiency‐beneficial fashion. In this work, the connection manners of subcells within a tandem cell are classified into three main categories, performing sequential growth, using the physical connection, and applying an intermediate layer, focusing on systematical description of intermediate layers using different materials. The advantages and disadvantages of these connection methods and their applicability to tandem cell types are further elaborated using two typical example models, III–V/Si and Perovskite inclusive tandem cell devices. Eventually, this work can provide useful guidance on how to carry out a suitable intermediate connection in the design of tandem solar cells depending on the selected subcells and device structure.

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Influence of Metal–Organic Vapor Phase Epitaxy Reactor Environment on the Silicon Bulk Lifetime

Cited by 24 publications

References 25 publications

III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

The Intermediate Connection of Subcells in Si‐based Tandem Solar Cells

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