Influence of Measured Scattering Parameters on the Convolution Simulation of Nonlinear Loaded High-Speed Microstrip Interconnects

Abstract

The simulation of nonlinear loaded high-speed microstrip interconnects by means of a convolution-based procedure is described when both, analytical and measured scattering parameters are used. Closed-form equations are employed to obtain the analytical scattering parameters. The influence of measured scattering parameters, when these are used instead the analytical ones, is investigated to know how the microstrip interconnect responses are affected. The convolution procedure is complemented by including the transmission line linear equation and the microwave circuit reflection theory.

Modeling and simulating the nerve axon as a thin-film microstrip

“…The inverse discrete Fourier transform of this equation (a continuous non-periodic function suffering from the Gibbs phenomenon [19]) can be used to obtain a direct value of the time-domain load impedance, which should be useful for comparison purposes when diode loaded microstrip interconnects simulations, by means of a convolution procedure [20] or through a two-dimensional finite-difference time-domain method, are performed.…”