Influence of manganese rate on structural, optical and electrochemical properties of CeO2 thin films deposited by spray pyrolysis: Supercapacitor applications

A geopolymer membrane for application in a structural mechanics and energy storage difunctional supercapacitor

“…The electronic resistance (intersection point between the curve and X -axis) of all samples is between 4 Ω and 5 Ω, which is also conducive to the charge storage process. 32,33…”

“…The electronic resistance (intersection point between the curve and X-axis) of all samples is between 4 O and 5 O, which is also conducive to the charge storage process. 32,33 The reciprocal of the frequency corresponding to the À451 phase angle in the Bode plots (Fig. 8(f)) is the relaxation time of Mn 7 O 13 , indicating the times required for the system to transform from an unstable state to a stable one, which are 6.859, 6.766, 5.105, 5.010, 6.540, 10 and 11.710 s (except for 160 1C 4 h), it can be seen that the relaxation times of 160 1C 24 h and 180 1C 4 h samples are shorter than those of other samples.…”

“…The electronic resistance of all samples is between 5 O and 15 O, which is also conducive to the charge storage process. 32,33 The calculated results of specific capacitance are shown in Fig. 9(d).…”

Density Functional Theory Investigation of Pristine and Ni-Doped CeO2 (110) for C2H4 Detection Based on Optimized Work Functions

“…11 Cerium oxide is widely used in catalytic research due to its excellent oxygen storage properties and reducibility. 12 p−n heterostructure, which has excellent selective oxidation catalysis for H 2 S gas. 15 Zhang et al reported that Nb-doped CeO 2 exhibited a response value of 26.5 for 100 ppm acetone at 240 °C operating temperature.…”

Ce3+ ion regulated CoNi-hydroxides for ultrahigh charge rate supercapacitors

“…Compared with low specific capacitance in carbon-based materials, metal oxides and hydroxides, the most studied pseudocapacitance electrode materials often show high specific capacitance. [7][8][9] The charge storage mechanism of pseudocapacitive materials included surface electron transfer of central cations coupled with the insertion/deinsertion of H + , Li + , Na + , or K + ions, for example, Mn IV O 2 + xLi + + xe − → Li x (Mn III Mn IV )O 2 . However, these materials often suffer from intrinsically low conductivity owing to their semiconductor nature.…”