Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3

Li, Xingcun; Lei, Wenwen; Zhao, Qian; Chen, Qiang

doi:10.1016/j.surfcoat.2012.08.041

Cited by 4 publications

(2 citation statements)

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“…For instance, Byun et al investigated CCP with very high frequency (VHF) for higher plasma density at elevated operating pressures during PEALD, leading to improved step coverage and reduced film residue at low substrate temperatures [15]. Xingcun Li et al demonstrated the impact of an external magnetic field on PEALD of Al 2 O 3 thin films, resulting in enhanced growth rates and surface morphology [16]. When an external magnetic field parallel to the electric field (E//B) is applied, electrons exhibit helical motion, prolonging their residence time in the plasma for collision and ionization, ultimately increasing plasma density [17].…”

Section: Introductionmentioning

confidence: 99%

“…When an external magnetic field parallel to the electric field (E//B) is applied, electrons exhibit helical motion, prolonging their residence time in the plasma for collision and ionization, ultimately increasing plasma density [17]. Thus, magnetized plasma has been utilized to achieve high-density plasmas during reactive plasma generation for PEALD [16,18]. However, limited research exists regarding the effect of magnetized plasma during PEALD on material properties.…”

Section: Introductionmentioning

confidence: 99%

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Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma

Ji,

Kim,

Kang

et al. 2024

Nanotechnology

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To obtain high-quality SiNx films applicable to an extensive range of processes, such as gate spacers in fin field effect transistors (FinFETs), the self-aligned quadruple patterning (SAQP) process, etc., a study of plasma with higher plasma density and lower plasma damage is crucial in addition to study on novel precursors for SiNxplasma-enhanced atomic layer deposition (PEALD) processes. In this study, a novel magnetized PEALD process was developed for depositing high-quality SiNx films using di(isopropylamino)silane (DIPAS) and magnetized N2 plasma at a low substrate temperature of 200°C. The properties of the deposited SiNx films were analyzed and compared with those obtained by the PEALD process using a non-magnetized N2 plasma source under the same conditions. The PEALD SiNx film, produced using an external magnetic field (ranging from 0 to 100 G) during the plasma exposure step, exhibited a higher growth rate (~1 Å/cycle) due to the increased plasma density. Additionally, it showed lower surface roughness, higher film density, and enhanced wet etch resistance compared to films deposited using the PEALD process with non-magnetized plasmas. This improvement can be attributed to the higher ion flux and lower ion energy of the magnetized plasma. The electrical characteristics, such as interface trap density and breakdown voltage, were also enhanced when the magnetized plasma was used for the PEALD process. Furthermore, when SiNx films were deposited on high-aspect-ratio (30:1) trench patterns using the magnetized PEALD process, an improved step coverage of over 98% was achieved, in contrast to the conformality of SiNx deposited using non-magnetized plasma. This enhancement is possibly a result of deeper radical penetration enabled by the magnetized plasma.

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Section: Introductionmentioning

confidence: 99%