Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

Aparimita, Adyasha; Naik, Ramakanta; Sahoo, Smruti Ranjan; Sripan, C.; Ganesan, R.

doi:10.1007/s00339-020-3390-2

Cited by 42 publications

(17 citation statements)

References 47 publications

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“…With the increasing concerns and demands nowadays, improvements are needed to achieve the most resonant characteristics for device applications. So many studies have concentrated on the effect of external energy input such as doping of foreign elements 7 , thermal annealing 8 , laser irradiation 9 , ion irradiation 10 , etc. on the properties of the films.…”

Section: Introductionmentioning

confidence: 99%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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“…It was observed that the film structure was maximum converted into As 2 Se 3 phase whose average crystallite size becomes 20.43 nm upon annealing above T g . The dislocation density (δ) which is defined as the length of the dislocation lines per unit volume of the crystal (Aparimita et al 2020b), the lattice strain of the different phases ( ) and number of crystallites per unit surface area (N) were evaluated and presented in Table 1 (Abd-Elnaiem et al 2020a).…”

Section: (A) Xrd Studymentioning

confidence: 99%

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Sahoo¹,

Priyadarshini²,

Dandela³

et al. 2021

Opt Quant Electron

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The present work reports the amorphous-crystalline phase transformation in thermally evaporated As 50 Se 50 thin films upon annealing at below T g (423 K) and above T g (523 K). The structural transition was probed by XRD, Raman and X-ray photoelectron spectroscopy. The composition and surface morphology were probed by EDS and FESEM techniques. The transmittance and reflectance spectra over the wavelength range 500 nm-1200 nm were used to deduce the optical parameters. The various optical parameters of the as-prepared and annealed As 50 Se 50 thin films were estimated and discussed in terms of density of defect states and disorders. The indirect optical energy gap decreased for the 423 K annealed film and abruptly increased for 523 K annealed film as compared to the as-prepared film. The Swanepoel envelope method, WDD model, and Sellemeire postulates were employed for the analysis of refractive index, static refractive index, oscillator energy, dispersion energy, oscillator wavelength and dielectric constant. The changes in the linear and nonlinear properties showed opposite behavior for the two annealed films. The non-linear refractive index and 3rd order susceptibility were found to be increased for 423 K annealed film and decreased for the 523 K annealed film. The optical as well as the electrical conductivity changed with annealing and the electrical susceptibility increased for 523 K annealed film. The tunable optical properties can be applied for several optoelectronic applications.

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“…The absorption edge refers to the split-up energy between the lowest of the conduction band and the highest of the valance band that gives the optical band gap. The transmittance, reectance and thickness of the lm are related to the absorption coefficient by the relation 39,40 T y (1 À R) 2 e Àat (1) which on simplication gives…”

Section: Absorption Coefficient (A)mentioning

confidence: 99%

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films

Sahoo¹,

Priyadarshini²,

Aparimita

et al. 2020

RSC Adv.

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Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

Cited by 42 publications

References 47 publications

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films

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Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

Cited by 42 publications

References 47 publications

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As40Se50Ge10 films

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Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films