Influence of laser repetition rate on the Cu2ZnSn(SSe)4 thin films synthesized via pulsed laser deposition technique

Vanalakar, S.A.; Mali, Sawanta S.; Agwane, G. L.; Kamble, A. S.; Kim, In Y.; Patil, P. S.; Kim, Jin Y.; Kim, Jin Hee

doi:10.1016/j.solmat.2016.05.063

Cited by 21 publications

(4 citation statements)

References 25 publications

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“…41 Additionally, the peak arises at 472 cm −1 , corresponding to the secondary (Cu 2 S) formation. 42 The intensity of the 328 cm −1 peak associated with CZTS was decreased with the increase in the Se 2− ion concentration attributed to larger ionic radii of Se 2− compared with those of S 2− , which expands the lattice cell in Cu 2 ZnSn(S 1−x Se x ) 4 . Additionally, the enhancement in intensity of the 196 cm −1 peak was observed, which confirms the substitution of S 2− ions by Se 2− ions.…”

Section: Resultsmentioning

confidence: 98%

“…The peaks appearing at 174, 196, and 236 cm –1 correspond to the CZTSSe phase . Additionally, the peak arises at 472 cm –1 , corresponding to the secondary (Cu 2 S) formation . The intensity of the 328 cm –1 peak associated with CZTS was decreased with the increase in the Se 2– ion concentration attributed to larger ionic radii of Se 2– compared with those of S 2– , which expands the lattice cell in Cu 2 ZnSn(S 1– x Se x ) 4 .…”

Section: Results and Discussionmentioning

confidence: 99%

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Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Patil

Khot

Mali

et al. 2020

Ind. Eng. Chem. Res.

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Recently, deposition of Cu 2 ZnSn(S 1−x Se x ) 4 (CZTSSe) thin films directly onto substrates via a cost-effective hydrothermal route has become a promising approach for their further development. We investigated the influence of the Se 2− ion content on the growth and optoelectronic properties of CZTSSe thin films. The synthesized CZTSSe nanocrystalline films showed considerable refining in their optoelectronic and photovoltaic properties. The optical absorption of CZTSSe films revealed that the band gap energy decreases from 1.5 to 1.42 eV with increment in the Se 2− ion concentration. Structural analysis confirms the improvement in the crystallinity with the kesterite crystal structure, which was also validated by ( 112) plane shifting with varying Se 2− ion concentration. Surface morphological and structural analyses confirm the formation of a highly uniform, well-crystalline, and compactly interconnected nanosphere-like morphology. Compositional analysis confirms that the CZTSSe film shows desired stoichiometric ratios with Cu, Zn, Sn, S, and Se in +1, +2, +4, −2, and −2 oxidation states, respectively, in Cu 2 ZnSn(S 1−x Se x ) 4 compositions. The promising composition is observed for Cu 2 ZnSn(S 1−x Se x ) 4 films with x = 0.075 Se-ion concentration. Photoelectrochemical solar cells assembled for the CZTSSe photoelectrode exhibited a current density (J sc ) of 4.64 mA/cm 2 and an open-circuit voltage (V oc ) of 542 mV, leading to a photoconversion efficiency of 3.62%. Our electrochemical impedance spectroscopy suggests lower values of charge-transfer resistance (R ct ) generated at the photoelectrode−electrolyte interface, which is in well agreement with photoelectrochemical solar cell performance.

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Section: Resultsmentioning

confidence: 98%

Section: Results and Discussionmentioning

confidence: 99%

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Patil

Khot

Mali

et al. 2020

Ind. Eng. Chem. Res.

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“…This band was attributed to A1 mode symmetric vibrations of the CZTSSe phase 41‐43 . The presence of this low‐intensity band at 327 cm −1 in the Raman spectra of the sample A2 could be also considered as another indication of a very low amount of S content in the sample A2 44 …”

Section: Resultsmentioning

confidence: 93%

“…[41][42][43] The presence of this low-intensity band at 327 cm −1 in the Raman spectra of the sample A2 could be also considered as another indication of a very low amount of S content in the sample A2. 44 Previous reports made on CZTSSe films indicated that more S content in the structure results in a shift to higher wavenumbers in the peak positions of the main characteristic Raman peaks of pure CZTSe structure. [45][46][47] In our study, it is clearly seen that all peaks observed in the Raman spectra of both films belong to the CZTSe structure.…”

Section: Resultsmentioning

confidence: 95%

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

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Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

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Fabrication of CZTSSe absorbers by optimized selenization of one-step co-electrodeposited CZTS precursors

et al. 2017

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Influence of laser repetition rate on the Cu2ZnSn(SSe)4 thin films synthesized via pulsed laser deposition technique

Cited by 21 publications

References 25 publications

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Fabrication of CZTSSe absorbers by optimized selenization of one-step co-electrodeposited CZTS precursors

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Influence of laser repetition rate on the Cu2ZnSn(SSe)4 thin films synthesized via pulsed laser deposition technique

Cited by 21 publications

References 25 publications

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn(S1–xSex)4 Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn(S1–xSex)4 Thin Films

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Fabrication of CZTSSe absorbers by optimized selenization of one-step co-electrodeposited CZTS precursors

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Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks