Influence of Laser-Conditioning on Laser-Induced Damage Properties of ZnSe Thin Films

Abstract

With the development of high power laser systems, laser protection of optical components becomes more and more important. In order to enhance the laser-induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser-induced damage threshold (LIDT) of thin films. Q switch Nd:YAG laser of the working wave length at 1064nm, was used to post process on ZnSe single layer films with thickness of /2 (=1064nm) deposited by thermal evaporation, and the laser-induced damage and optical properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 3.0 J/cm2 and pulse number is 1.The LIDT of post processed ZnSe films was improved from 5.0J/cm2 to 8.2J/cm2.

High-Strength Optical Coatings for Single-Crystal ZnGeP2 by the IBS Method Using Selenide and Oxide Materials

“…There is information in the literature about the LIDT of ZnSe thin films. For example, in [23], it is shown that its LIDT is in the range of 1-3 J/cm 2 , at a pulse repetition rate of 1 Hz. At the same time, in [24], an AR coating based on a ZnSe/YbF 3 pair shows LIDT at a level of 12.2 J/cm 2 .…”