Influence of LaNiO3 and LaNi0.5Mn0.5O3 Buffer Layers on the Structural and Electrical Properties of BiNi0.5Mn0.5O3 Thin Films

Abstract

The structural and electrical properties of BiNi 0.5 Mn 0.5 O 3 /LaNi 0.5 Mn 0.5 O 3 (BNM/LNM) and BiNi 0.5 Mn 0.5 O 3 /LaNiO 3 (BNM/LNO) heterostructure thin films fabricated on Pt/Ti/SiO 2 /Si(100) substrates by a chemical solution deposition method were studied. The x-ray diffraction results indicated that polycrystalline hexagonal perovskite structures were formed. It was found that the electrical properties of the heterostructure thin films were obviously different from each other. For the Au/BNM/LNM/Pt structure, slightly distorted ferroelectric hysteresis loops were observed and the leakage current density versus applied electric voltage curves at positive and negative biases were asymmetrical. The conduction mechanism was dominated by an ohmic conduction mechanism at positive bias, whereas at negative bias, the conduction mechanism was dominated by the ohmic conduction mechanism, trapfilled-limit (TFL) conduction, and grain-boundary-limited behavior. However, for the Au/BNM/LNO/Pt structure, slim hysteresis loops with no distortion were observed and the leakage current was approximately four orders of magnitude lower than that of Au/BNM/LNM/Pt. The conduction mechanisms were controlled mainly by an ohmic conduction mechanism, TFL conduction, and grain-boundary-limited behavior at positive and negative biases.

Effect of Au Addition on the Crystallinity and Electrical Properties of Thermally Strained LaNiO3−δ Thin Films

“…[1][2][3] The metallic conductivity and chemical stability of LNO films make them suitable for use as electrodes for high-quality dielectric and ferroelectric materials in electronic devices. 4,5 Extensive investigations on LNO thin films have been conducted in recent years, particularly on methods to lower the resistivity of LNO films. The resistivity of LNO films may be lowered by depositing high-quality single crystal films or synthesizing nanocomposite films with highly conductive metals.…”