Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies

Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

“…12 These devices are very susceptible to suffer impact ionization processes due to the small band gap of InGaAs and the very high electric fields appearing in the gate-drain region when the device dimensions are shortened to improve the operation frequency. 13 The origin of this noise enhancement is not still completely understood. 13 The origin of this noise enhancement is not still completely understood.…”

Fabrication and charaterization of InP-based high election mobility transistors

“…However, the origin of the excess noise is still inconclusive. Studies from Rouqutte et al [10] show that a time constant as small as 25 ps could be determined by fitting the noise spectral density to the form of Lorentzian function, which suggests the possibility of the excess noise in the impact ionization regime being induced by the fluctuation of impact ionization events. On the other hand, there is also a theoretical study implying that the excess noise is related to the generation of holes by impact ionization and their further recombination.…”

“…The large noise observed in the impact ionization regime was initially ascribed to a high gate-drain leakage or measurement errors [72]. Rouqutte et al [73] and Murti et al [7] lately show that a time constant as small as 25 ps could be determined by fitting the noise spectral density to the form of Lorentzian function, which suggests the possibility of the excess noise in the impact ionization regime being induced by the fluctuation of impact ionization events. On the other hand, a Monte…”