Influence of ion energy and arrival rate on x-ray crystallographic properties of thin ZrOx films prepared on Si(111) substrate by ion-beam assisted deposition

Matsuoka, Makoto; Isotani, Sadao; Chubaci, J.F.D.; Miyake, Shoji; Setsuhara, Yuichi; Ogata, Kiyoshi; Kuratani, Naoto

doi:10.1063/1.1286108

Cited by 45 publications

(28 citation statements)

References 9 publications

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“…This cubic phase becomes easily stabilized by alloying zirconium oxide with other oxides. 20 This apparently indicates that the deposited material is alloyed with another oxide; however, no peaks pertaining to other materials are detected in the XRD spectra, and the diffraction peaks are well identified with the cubic phase. On the other hand, the XRD spectrum for a zirconium oxide film prepared at Ts ϭ 575°C for deposition times of at least 35 min, keeping constant all others deposition parameters, shows a diffraction peak located at 34.16°, which can be associated with reflections on the (200) family planes of the monoclinic phase (baddeleyite), as is shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

Spray deposition and characterization of zirconium-oxide thin films

Ortíz¹,

Alonso²,

Haro‐Poniatowski

2005

Journal of Elec Materi

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Zirconium oxide films were prepared by the pyrosol process using zirconium acetylacetonate as source material onto clear fused quartz and (100) silicon at substrate temperatures ranging from 300°C to 575°C. X-ray diffraction (XRD) measurements show that samples prepared at substrate temperatures lower than 425°C are amorphous. Films deposited at higher temperatures and short deposition times show a cubic crystalline structure. However, for long deposition times, the samples show monoclinic crystalline structure. A similar phase transformation is observed on samples deposited at short time if they are annealed at high temperature. The cubic and monoclinic phases of the corresponding samples were confirmed by infrared (IR) and Raman spectroscopy, respectively. The ZrO 2 films with cubic phase show an almost stoichiometric chemical composition and refractive index values of the order of 2.1 with an energy band gap of 5.47 eV. The current-density electric-field characteristics of metal-oxide semiconductor (MOS) structures show a small ledge from 2 MV/cm to 4.5 MV/cm, indicating current injection and charge trapping. For higher electric fields, the current is associated with oxygen ion diffusion through the zirconium oxide film. The dielectric breakdown is observed at 6 MV/cm, which is a value higher than those observed in the monoclinic and tetragonal phases.

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Section: Resultsmentioning

confidence: 98%

Spray deposition and characterization of zirconium-oxide thin films

Ortíz¹,

Alonso²,

Haro‐Poniatowski

2005

Journal of Elec Materi

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“…As the etching time increases, a progressive chemical shift of Zr-O peaks towards a lower binding energy has been observed. This is due to evolution from stoichiometric to sub-stoichiometric Zr-O towards a deeper region of all investigated films [39,40]. This is the only compound being detected in the 5-min oxidized sample.…”

Section: Xps Measurementsmentioning

confidence: 98%

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

Wong

Cheong

2011

Journal of Alloys and Compounds

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“…It is worthwhile noticing that for T<1170°C the stable thermodynamic polymorph is the monoclinic ZrO 2 phase, while the tetragonal (t) structure is obtained between 1170 and 2370°C, and the cubic form is present between 2370 and 2680°C. [21] The stabilization of the t'-phase has been ascribed to the occurrence of low-size crystallites, surface/lattice defects, and domain boundary stresses, [22,23] the formation of which takes place under the non-equilibrium conditions typical of the SG process.…”

Section: Ceo 2 -Zro 2 Nanosystemsmentioning

confidence: 99%

Functional Metal Oxide Nanosystems by a Hybrid CVD/Sol–Gel Approach

Armelao

Barreca

Bottaro

et al. 2007

Chemical Vapor Deposition

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The present contribution is devoted to outlining some recent results from an innovative approach to metal oxide nanosystems. The proposed synthesis pathway is based on three successive steps: i) preparation of a porous xerogel layer (host) via sol-gel (SG); ii) CVD of a guest phase on the above matrix, making it possible to achieve an intimate host/guest intermixing; iii) ex situ thermal treatment under suitable conditions, aimed at tailoring the system properties as a function of the desired application. In particular, the above route has been adopted in two specific cases, LaCoO 3 and CeO 2 -ZrO 2 nanostructured thin films, which are acquiring increasing importance in the development of fuel cell technology. The most significant results, obtained by glancing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM), will be critically discussed, emphasizing the achievement of tailored material properties by design.

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Influence of ion energy and arrival rate on x-ray crystallographic properties of thin ZrOx films prepared on Si(111) substrate by ion-beam assisted deposition

Cited by 45 publications

References 9 publications

Spray deposition and characterization of zirconium-oxide thin films

Spray deposition and characterization of zirconium-oxide thin films

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

Functional Metal Oxide Nanosystems by a Hybrid CVD/Sol–Gel Approach

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