Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

Verma, Shruti; Pandey, Sushil; Gupta, Mukul; Mukherjee, Shaibal

doi:10.1007/s10853-014-8396-8

Cited by 24 publications

(11 citation statements)

References 38 publications

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“…Particularly since pores are potential scattering centers for the electrons and consequently reduce conductivity [17]. Furthermore, good values of hardness can be attributed to the high density and very uniform distribution of the metal oxides in silver matrix.…”

Section: Sem Images With Results Of Eds Analysis Of Ag-sno 2 In 2 Omentioning

confidence: 99%

Comparison of properties of silver-metal oxide electrical contact materials

Ćosović¹,

Talijan²,

Živkovič

et al. 2012

J min metall B Metall

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Changes in physical properties such as density, porosity, hardness and electrical conductivity of the Ag-SnO2 and Ag-SnO2In2O3 electrical contact materials induced by introduction of metal oxide nanoparticles were investigated. Properties of the obtained silver-metal oxide nanoparticle composites are discussed and presented in comparison to their counterparts with the micro metal oxide particles as well as comparable Ag-SnO2WO3 and Ag-ZnO contact materials. Studied silvermetal oxide composites were produced by powder metallurgy method from very fine pure silver and micro- and nanoparticle metal oxide powders. Very uniform microstructures were obtained for all investigated composites and they exhibited physical properties that are comparable with relevant properties of equivalent commercial silver based electrical contact materials. Both Ag-SnO2 and Ag- SnO2In2O3 composites with metal oxide nanoparticles were found to have lower porosity, higher density and hardness than their respective counterparts which can be attributed to better dispersion hardening i.e. higher degree of dispersion of metal oxide in silver matrix

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Section: Sem Images With Results Of Eds Analysis Of Ag-sno 2 In 2 Omentioning

confidence: 99%

Comparison of properties of silver-metal oxide electrical contact materials

Ćosović¹,

Talijan²,

Živkovič

et al. 2012

J min metall B Metall

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“…1. Prior to deposition, the substrate was cleaned; details can be found in our previous work [13], [14].…”

Section: Methodsmentioning

confidence: 99%

“…The band gap of CdO is 2.3 eV, which is ~ 1 eV narrower than in ZnO. Our previous work on thin CdZnO films highlights various properties of CdZnO semiconductor [13]. With a view to developing highly efficient opto-electronic devices, nanostructures have sparked interest because of increased surface-to-volume ratio.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Cd-doped ZnO Nanohybrids

Verma

Pandey

Mukherjee

et al. 2014

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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Hybrid inorganic/organicCd-doped ZnO nanostructures called CZO nanohybrids were electrochemically synthesized on Ga-doped ZnO/Si. The CZO nanohybrids comprise alternating layers of organic surfactant and CZO inorganic phase. These lamellar structured nanohybrids were found to be c-axis oriented, perpendicular to the substrate with good crystallinity. During photoluminescence measurement, a strong orange emission from CZO was observed. The nanohybrids were found to have band gap of 3.3 eV, indicating band gap shrinkage relative to ZnO. The nanohybrids hold great promise for the development of hybrid inorganic/organic lightemitting devices.

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“…[1][2] ZnO films for UV PDs have been deposited by various techniques such as magnetron sputtering, 3 molecular beam epitaxy, 4 and pulse laser deposition. 5 Moreover various studies based on Ga-doped ZnO (GZO) thin films for UV PDs have been reported.…”

Section: Introductionmentioning

confidence: 99%

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

et al. 2015

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Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering in metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mAW-1 at zero bias, which is 15 times larger than that reported on similar material grown by other physical vapour deposition process, with the internal and external quantum efficiency values of ~22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at two metal semiconductor contacts. The asymmetry in electrodes was investigated by temperature-dependent current-voltage measurements.

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Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

Cited by 24 publications

References 38 publications

Comparison of properties of silver-metal oxide electrical contact materials

Comparison of properties of silver-metal oxide electrical contact materials

Synthesis and characterization of Cd-doped ZnO Nanohybrids

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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