Influence of ion-beam etching by Ar ions with an energy of 200–1000  eV on the roughness and sputtering yield of a single-crystal silicon surface

Abstract

The behavior of sputtering yield and the surface roughness of monocrystalline silicon of orientations ⟨ 100 ⟩ , ⟨ 110 ⟩ , and ⟨ 111 ⟩ under the ion-beam bombardment by neutralized Ar ions with energies of 200–1000 eV is studied. The significant dependence (modulation) of sputtering yield on incidence angle due to crystalline structure is observed. It is shown that a sharp increase in the sputtering yield and a decrease in the effective surface roughness at energies above 400 eV occurs. At energies of more than 400 eV for orientations ⟨ 100 ⟩ , ⟨ 110 ⟩ , and ⟨ 111 ⟩ at normal ion incidence, smoothing of the effective roughness in the range of spatial frequencies ν ∈ [ 4 . 9 ⋅ 1 0 − 2 − 6 . 3 ⋅ 1 0 1 µ m − 1 ] up to a value of 0.17 nm is observed. This makes it possible to use the ion-beam etching technique for finishing polishing, aspherization, and correction of local shape errors of single-crystal silicon substrates, which are of the greatest interest for synchrotrons of the 3rd+ and 4th generation and x-ray free electron lasers.

Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping

“…This value is comparable to the roughness of classical substrates for the microelectronic industry [16,17]. After ion beam polishing, as shown in [15], one can expect a decrease in roughness to 0.25−0.2 nm, which satisfies the requirements for X-ray optical applications.…”

“…The effective roughness was 0.37 nm. We expect that, according to the work of [15], after ion-beam polishing, the roughness will decrease to 0.2−0.25 nm, which is quite sufficient for X-ray optical applications.…”

Hybrid height and slope figuring method for grazing-incidence reflective optics

“…10, we purchased a 30 mm  160 mm spherical mirror, which had been shaped to be within AE 1% of the expected ROC, as the base mirror. Also, the mirror was further pitch-polished to achieve the specified roughness level, since IBF can hardly reduce but introduce minimal damage to the roughness (Mikhailenko et al, 2022). The left and right ends of the mirror were marked as A and B, respectively.…”

Методика Получения Атомарно Гладких Подложек Из Монокристаллического Кремния Методом Механического Притира

“…Эффективная шероховатость составила 0.37 nm. Мы ожидаем, что, согласно работе [15], после ионно-пучковой полировки шероховатость снизится до величины 0.2−0.25 nm, что вполне достаточно для рентгенооптических приложений.…”

“…Эта величина сравнима с шероховатостью классических подложек для микроэлектронной промышленности [16,17]. После ионной пучковой полировки, как показано в [15], можно ожидать снижения шероховатости до 0.25−0.2 nm, что удовлетворяет требованиям к рентгенооптическим приложениям.…”