Influence of ingot rocking on the surface quality of multi-wire sawing monocrystalline silicon wafers

Xu, Zhenqin; Feng, Yong; Pan, Long; Wang, Xiaoyu; Wang, Haoxiang; Jia, Xiaolin

doi:10.1007/s00170-020-04996-6

Cited by 9 publications

(3 citation statements)

References 23 publications

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“…Additionally, industrial-grade multi-wire DWS utilizes multiple wires with diamond particles to perform cutting simultaneously. The use of multiple wires in the industrial grade setup allows for higher cutting efficiency and increased productivity compared to single-wire saws [ 112 ]. Costa et al [ 113 ] conducted experiments using a single diamond wire in a circular configuration to investigate the influence of DWS on the feed force and silicon wafer quality.…”

Section: Machining Performance Of Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical stage in solar cell manufacturing. In order to improve the production yield of the cutting process, it is necessary to have a thorough understanding of the phenomena relating to the cutting parameters. This research reviews and summarizes the technology for the precision machining of monocrystalline silicon using diamond wire sawing (DWS). Firstly, mathematical models, molecular dynamics (MD), the finite element method (FEM), and other methods used for studying the principle of DWS are compared. Secondly, the equipment used for DWS is reviewed, the influences of the direction and magnitude of the cutting force on the material removal rate (MRR) are analyzed, and the improvement of silicon wafer surface quality through optimizing process parameters is summarized. Thirdly, the principles and processing performances of three assisted machining methods, namely ultrasonic vibration-assisted DWS (UV-DWS), electrical discharge vibration-assisted DWS (ED-DWS), and electrochemical-assisted DWS (EC-DWS), are reviewed separately. Finally, the prospects for the precision machining of monocrystalline silicon using DWS are provided, highlighting its significant potential for future development and improvement.

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Section: Machining Performance Of Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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“…Their results demonstrated that utilizing the rocking mode reduced the contact length by nearly half and decreased the equivalent chip thickness, thereby decreasing the surface roughness. Xu et al [13] used a diamond multi-wire reciprocating saw with an ingot rocking process to slice monocrystalline silicon wafers. Their results showed that the ingot-rocking cutting mode produced better surface morphologies, surface roughness values, hardened-layer thicknesses, and surface microhardness values during the silicon wafer cutting than did the traditional sawing method.…”

Section: Introductionmentioning

confidence: 99%

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

lin,

Huang,

2024

Preprint

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At present, wire sawing technology is the primary slicing method used for certain brittle materials, including monocrystalline silicon, sapphire, and silicon carbide. The surface quality of the sawn wafers significantly impacts subsequent machining processes, such as grinding and polishing. A theoretical model was developed to predict the amount of material removed per unit length of wire during the slicing of circular workpieces by a wire saw with reciprocating and rocking functions. Experiments were conducted during this study in which crystal ingots were sliced using a multi-wire saw, and the amount of material removed per unit length of wire was determined at different cutting positions on the workpiece cross-section. The surface roughness of each crystal wafer was measured systematically. The experimental results revealed that the surface roughness values measured at different points at the same y-coordinate position on a single wafer were approximately equal. However, the surface roughness was greatest on both the initial and final cutting edges and gradually decreased toward the wafer center. The surface roughness was also greatest for the wafer cut nearest to the new wire side, though it gradually decreased for wafers cut nearer to the center of the workpiece and remained relatively consistent from the middle wafer to the wafer cut nearest to the used wire side. The results also indicated that both the material removed per unit length of wire and the surface roughness of the wafer decreased with increases in the wire speed. The relationship between the material removed per unit length of wire and the surface roughness was approximately linear. When the material removed per unit length of wire was set to 0.00333 mm³/m, the average wafer surface roughness was 0.45 µm.

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“…Chen and Gupta [12] showed that a swinging motion decreases the contact length and the equivalent chip thickness by 50% for wire-sawing of a mono-crystalline alumina oxide wafer. Xu et al [13] determined that the amplitude of the swing of the ingot for multi-wire sawing of mono-crystalline silicon wafers has no significant effect on the contact wire length but has a significant effect on the ingot feed speed. It was shown that a swinging amplitude for the ingot of 5 • gives the best quality machined surface for WSM with swinging.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Different Slurry Concentrations and Wire Speeds for Swinging and Non-Swinging Wire-Saw Machining

et al. 2020

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Slurry concentration and wire speed affect the yield and machining quality of ceramics (Al2O3) that are produced using wire-saw machining (WSM). This study determines the effect of slurry concentration and wire speed on the material removal rate (MRR), the machined surface roughness (SR), the kerf width, the wire wear and the flatness for swinging and non-swinging WSM. The experiments show that swinging WSM results in a higher machining efficiency than non-swinging WSM. WSM with swinging also achieves a peak MRR at a medium slurry concentration (25 wt%) and a higher wire speed (5.6 m/s) using the cutting conditions for the experimental region. However, slurry concentration and wire speed have no significant effect on the machined SR, the kerf width, the wire wear or the flatness for WSM with swinging mode.

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Influence of ingot rocking on the surface quality of multi-wire sawing monocrystalline silicon wafers

Cited by 9 publications

References 23 publications

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

The Effects of Different Slurry Concentrations and Wire Speeds for Swinging and Non-Swinging Wire-Saw Machining

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