Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes

Jung, Young Jin; Cho, Seong‐Yong; Jung, Jee Won; Kim, Sei Yong; Lee, Jeong‐Hwan

doi:10.1186/s40580-019-0196-z

Cited by 25 publications

(13 citation statements)

References 28 publications

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“…For almost of all planar multilayer structure LEDs, including OLEDs and QLEDs, most generated photons will be trapped inside devices by waveguide mode and substrate mode, only around 15–20% photons can be outcoupled because of the refractive index mismatch among functional layers, glass substrate and air. , Similar to that with OLEDs, E out can be enhanced using periodic nano- or microstructures, e.g ., microlens array in this kind of multilayer planner structure LEDs . Moreover, because of the overlap between absorption and luminescence spectra, which means an equivalently prolonged lifetime of excitons, the photons trapped inside device should have more chance to escape before annihilation by a recycling process …”

Section: Applicationsmentioning

confidence: 99%

State of the Art and Prospects for Halide Perovskite Nanocrystals

et al. 2021

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Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

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Section: Applicationsmentioning

confidence: 99%

State of the Art and Prospects for Halide Perovskite Nanocrystals

et al. 2021

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“…Indium tin oxide as a transparent conductive oxide (TCO) is widely used in optoelectronic devices such as light-emitting diodes (LED) because of its high electrical conductivity and good transparency in invisible light [ 125 , 126 , 127 ]. Modification of these materials is of interest to tune the electrical properties such as surface work function.…”

Section: Effects Of Surface Modification On the Structural Properties Of Itomentioning

confidence: 99%

The Impact of the Surface Modification on Tin-Doped Indium Oxide Nanocomposite Properties

et al. 2022

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This review provides an analysis of the theoretical methods to study the effects of surface modification on structural properties of nanostructured indium tin oxide (ITO), mainly by organic compounds. The computational data are compared with experimental data such as X-ray diffraction (XRD), atomic force microscopy (AFM) and energy-dispersive X-ray spectroscopy (EDS) data with the focus on optoelectronic and electrocatalytic properties of the surface to investigate potential relations of these properties and applications of ITO in fields such as biosensing and electronic device fabrication. Our analysis shows that the change in optoelectronic properties of the surface is mainly due to functionalizing the surface with organic molecules and that the electrocatalytic properties vary as a function of size.

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“…Photovoltaic devices are recognized as prospective energy sources [1][2][3][4][5][6][7][8] . As light absorbers, halide perovskites have had a significant impact on solar cell research owing to their remarkable photovoltaic properties, such as their long charge diffusion length and low exciton binding energies [9][10][11][12][13][14][15][16] . In particular, the current-voltage (I-V) hysteresis of halide perovskites has broadened their applications to electronic devices beyond photovoltaics, such as field-effect transistors, resistive-switching memory, and artificial synapses [17][18][19] .…”

Section: Introductionmentioning

confidence: 99%

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

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Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3. Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13-based memory devices (10 9) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

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Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes

Cited by 25 publications

References 28 publications

State of the Art and Prospects for Halide Perovskite Nanocrystals

State of the Art and Prospects for Halide Perovskite Nanocrystals

The Impact of the Surface Modification on Tin-Doped Indium Oxide Nanocomposite Properties

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

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