Influence of indium tin oxide residues on the electrical performance of hydrogenated amorphous silicon thin-film transistors in the backplane of active-matrix displays

Yu, Xingwen; Zhang, Zhiqiang; Pei, Jingxuan; Zhang, Jing; Boukherroub, Rabah

doi:10.1039/d2tc04397a

Cited by 2 publications

(1 citation statement)

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“…Notably, even under a strain of 0.4% corresponding to bending radius of 1.0 mm, the mobility of the device could still reach up to 10 cm 2 V −1 s −1 , approaching that of amorphous oxide semiconductor transistors (>10 cm 2 V −1 s −1 ). [58] Furthermore, after applying the device to multiple bending cycles at a strain of 0.68%, it retained its exceptional performance (Figure 5i; and Figure S21, Supporting Information). The ultrathin substrates help reduce the applied strain in the devices, even though the strain was only 0.68%, our OFETs could be bent to a very small radius of ≈0.6 mm without any significant loss in performance, which is important for achieving high-performance flexible electronics.…”

Section: Resultsmentioning

confidence: 99%

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

Sheng,

Deng,

Ren

et al. 2024

Advanced Materials

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Advanced organic electronic technologies have put forward a pressing demand for cost‐effective and high‐throughput fabrication of organic single‐crystal films (OSCFs). However, solution‐printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large‐scale and high‐performance organic electronics. Here, we elucidate that these structural defects are mainly originated from printing flow‐induced anisotropic growth, an important factor that has been overlooked for too long. In light of this, we propose a surfactant‐additive printing method to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s−1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V−1 s−1, which is one of the highest values for flexible organic field‐effect transistor arrays. Moreover, we realize large‐scale OSCF‐based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles. Our work provides profound insights into breaking the limitation of flow‐induced anisotropic growth and opens new avenues for printing large‐scale organic single‐crystal electronics.This article is protected by copyright. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

Sheng,

Deng,

Ren

et al. 2024

Advanced Materials

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Investigation of electrothermal properties of indium-tin-oxide thin films

Altinkok,

Olutas,

Altinkok

2024

Mod. Phys. Lett. B

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Transparent conductive oxide (TCO) thin films are highly sought-after for their unique characteristics of conducting electricity and transmitting visible light, making them ideal conductive coating materials for electronic devices. We carried out a comprehensive analysis of the deposition, optical, electrical, and structural properties of ITO and Ag/ITO thin films on glass substrates in this study. The weight ratio of the deposited metals was 1:10, 2:10, and 4:10[Formula: see text]wt.% (Sn:In) for ITO films and 1:1:10[Formula: see text]wt.% (Ag:Sn:In) for Ag–ITO film. The films were annealed at 300°C using a program controller furnace. We employed infrared cameras to analyze the surface temperature profiles of these thin films under external voltage supply. We also investigated the resistivity behavior of both ITO and Ag–ITO films, analyzing them with regard to Mott’s variable range hopping (VRH) model and the fluctuation-induced tunneling model. Scanning electron microscope images revealed that adding Ag increased the grain size of ITO thin films. The average grain size for ITO thin film was determined as 186[Formula: see text]nm, while it was found to be 270[Formula: see text]nm for Ag–ITO thin film. Furthermore, incorporating Ag into the ITO thin film resulted in a reduction of 21.5% in transmittance over the complete visible range of the electromagnetic spectrum when compared to the ITO thin film without Ag as measured by ultra-visible spectrophotometer. The figure of merit was obtained as [Formula: see text] for ITO and [Formula: see text] for Ag–ITO thin films. However, the resistance of the ITO thin film was calculated to be 9.58[Formula: see text]k[Formula: see text], while that of the Ag–ITO film was found to be 6.99[Formula: see text]k[Formula: see text]. The ITO thin film that included Ag exhibited a lower electrical resistivity due to the larger grain size caused by doped Ag atoms in the structure, leading to less electron scattering at the grain boundaries and a resulting decrease in resistivity as determined by four-point probe system. Thermal imaging camera measurements revealed that the surface temperature of the ITO thin film decreased with the addition of Ag under high voltage application, but not under low voltage. When a voltage of 350[Formula: see text]V and 250[Formula: see text]V was applied to the thin films, the ITO film exhibited a surface temperature of 73.9°C and 50.4°C, whereas under identical conditions, the Ag–ITO film showed a surface temperature of 62°C and 44.1°C, respectively. Furthermore, both films exhibited exponentially increasing surface temperature behavior under a certain voltage, suggesting that they have potential for transparent heaters and high-voltage/low-current applications.

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Influence of indium tin oxide residues on the electrical performance of hydrogenated amorphous silicon thin-film transistors in the backplane of active-matrix displays

Abstract: Etching residues of crystallized indium-tin oxide (ITO) films deteriorate thin-film transistor (TFT) characteristics and affect negatively the display images. Usability of active-matrix displays is inseparable from TFT backplane. Particularly, in...

Cited by 2 publications

References 60 publications

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

Investigation of electrothermal properties of indium-tin-oxide thin films

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