Influence of indium doping on the electrical properties of Ge2Sb2Te5thin films for nonvolatile phase change memory devices

Lazarenko, Petr; Шерченков, А. А.; Kozyukhin, S. A.; Бабич, А. В.; Nguen, H P; Тимошенков, С. П.; Громов, Д. Г.; Yakubov, A. O.; Terekhov, Dmitry Yu.

doi:10.1088/1742-6596/690/1/012006

Cited by 12 publications

(4 citation statements)

References 11 publications

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“…We fabricated the T‐shaped PCM cells with a D = 120‐nm TiN bottom electron contact (BEC) to investigate the electrical properties of IGST‐based device and the structure of the device is shown in Figure 3(A). Previous works on In‐Ge‐Sb‐Te system only achieved slightly improved performances, obtaining the In‐doped GST films by co‐sputter In 3 SbTe 2 and GST targets or by thermal evaporation 27,28 . The film obtained by thermal evaporation has low density and poor surface uniformity, leading to poor adhesion with the interface.…”

Section: Resultsmentioning

confidence: 99%

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Wang

Zhang

Song

et al. 2021

InfoMat

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Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further application. Here, we demonstrate PCM based on In0.9Ge2Sb2Te5 (IGST) alloy, showing 180°C 10‐years data retention, 6 ns set speed, one order of magnitude longer life time, and 75% reduced power consumption compared to GST‐based device. The In can occupy the cationic positions and the In‐Te octahedrons with good phase‐change properties can geometrically match well with the host Ge‐Te and Sb‐Te octahedrons, acting as nucleation centers to boost the set speed and enhance the endurance of IGST device. Introducing stable matched phase‐change octahedrons can be a feasible way to achieve practical PCMs.

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Section: Resultsmentioning

confidence: 99%

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Wang

Zhang

Song

et al. 2021

InfoMat

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“…Skelton et al reported that the Bi doping improves the crystallization speed and n‐type conductivity of Ge 2 Sb 2 Te 5 . Other dopants such as O 2 , N 2 , Si, In, Sn, SiO 2 , Ag, Al, Cr, and Mg were also adopted to enhance the switching properties of phase switchable chalcogenide materials.…”

Section: Inorganic Phase‐change Memoriesmentioning

confidence: 99%

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Sung

Kim

et al. 2019

Adv Materials Technologies

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The latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von‐Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von‐Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next‐generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic‐based unconventional memristive devices for future AIS applications.

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“…Furthermore, GST alloys are characteristic of relatively large, >6% density difference between the amorphous and crystalline phases, limiting the endurance and switching speed of GST devices. In this regard, doping strategies have been used for telluride PCM materials in order to increase the crystallization temperature and to improve the resistance drift, mechanical stability, resistance contrast, and switching speed. − For example, Cu–Ge–Te (CGT) PCM materials have been shown to require a lower switching energy while providing higher thermal stability than GST at comparable switching speeds . Furthermore, the density change of CGT upon crystallization is smaller with respect to GST or GeTe, which is beneficial for the cycling properties of PCM devices .…”

Section: Introductionmentioning

confidence: 99%

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu–Ge–Te Nanoparticles

Kumaar,

Can,

Weigand

et al. 2024

Chem. Mater.

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Influence of indium doping on the electrical properties of Ge₂Sb₂Te₅thin films for nonvolatile phase change memory devices

Cited by 12 publications

References 11 publications

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu–Ge–Te Nanoparticles

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