2015
DOI: 10.1016/j.phpro.2015.06.153
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Influence of Indentation on the Critical Current of Nb3Sn Strands

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Cited by 14 publications
(10 citation statements)
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“…Clear deformation of the Nb 3 Sn strands was found during cabling, as shown in figure 2. The effect of deformation on the superconducting properties prior to heat treatment was investigated and it was found that the I c of ITER internal tin strands starts to exhibit degradation when subjected to indentations deeper than a certain value [14][15][16]. At present, no effective solution has been found to prevent strand deformation during STP cabling.…”
Section: Conductor Design and Sample Preparationmentioning
confidence: 99%
See 1 more Smart Citation
“…Clear deformation of the Nb 3 Sn strands was found during cabling, as shown in figure 2. The effect of deformation on the superconducting properties prior to heat treatment was investigated and it was found that the I c of ITER internal tin strands starts to exhibit degradation when subjected to indentations deeper than a certain value [14][15][16]. At present, no effective solution has been found to prevent strand deformation during STP cabling.…”
Section: Conductor Design and Sample Preparationmentioning
confidence: 99%
“…Research has been carried out on the performance of strand with indentation, showing that indentation of less than some value (e.g. depth<0.23 mm) hardly has an impact on the critical current (I c ) [14][15][16]. However, no research has been done on the related impact of indentation on the performance of both strand and CICC under mechanical load.…”
Section: Introductionmentioning
confidence: 99%
“…From the former research [15], [16], [18], it's clear that the alloy phase superconductors, NbTi and Nb 3 Sn show good mechanical properties, e.g. high yield strength although Nb 3 Sn filament shows more brittle compared with NbTi filament after heat treatment.…”
Section: Discussion and Comparison With Nb 3 Sn Nbti And Bi-2212 Roun...mentioning
confidence: 99%
“…Calzolaio和Bruzzone [107] 的磁化测试等效应 变实验同样显示, 短节距导体内部等效压缩应变随 循环次数的增加而减小, Harjo等人 [86] 用中子散射的 方法发现了相同的规律. 近年来Takahashi等人 [113] , Sanabria等人 [72,115,116] , Qin等人 [117] 和Tomone等人 [118] 研究发现横向电磁力作用下的股线弯曲、挤压变形、 芯丝断裂等并非是导致T cs 退化的主要原因. 并且认 为电缆与导体之间可能存在slip-stick(黏滑)行为是造 成T cs 变化的主要机制 [116] .…”
Section: 发现标准的Csio1导体与长节距csio2-ltp导体分unclassified