Abstract:Si-rich Silicon carbide thin films have grown popularity in the past decade for various opto-electronic applications. Post processing of these thin films at temperature higher than 1000oC usually lead to phase transformations to form Si nanoclusters embedded in amorphous SiC deposited by sputtering on thin films. However, the processing technique is crucial to avoid contaminants, and obtain good quality films. Therefore, a novel in-situ annealing approach within the deposition chamber is carried out at tempera… Show more
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