Influence of In-doping on resistivity of chemical bath deposited SnS films

Ge, Yanhui; Guo, Yuzheng; Shi, Weimin; Yong-hua, Qiu; Wei, Guangpu

doi:10.1007/s11741-007-0417-1

Cited by 35 publications

(12 citation statements)

References 11 publications

(9 reference statements)

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“…Similarly, the microstrain decreases with doping which is expected and concurrent with reported studies. [ 21,44 ] The dual dopants‐induced lattice dislocation (γ) is numerically calculated using Equation () [ 8 ] and the results is shown in Table S4 in the Supporting Information

\begin{matrix} (γ) = \frac{15 ε}{a S_{cryst}} \end{matrix}

where a is the lattice constant, ε is the microstrain, and S cryst is the average crystallite size.…”

Section: Resultsmentioning

confidence: 99%

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Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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Bismuth chalcogenides are promising materials for thermoelectric (TE) application due to their high power factor (product of the square of the Seebeck coefficient and electrical conductivity). However, their high thermal conductivity is an issue of concern. Single doping has proven to be useful in improving TE performance in recent years. Here, it is shown that dual isovalent doping shows the synergistic effect of thermal conductivity reduction and electron density control. The insertion of large atoms in the layered Bi2Te3 structure distorts the crystal lattice and contributes significantly to phonon scattering. The ultralow thermal conductivity (KT = 0.35 W m−1 K−1 at 473 K) compensates for the low power factor and thus enhances TE performance. The density functional theory electronic structure calculation results reveal deep defects states in the valence band, which influences the electronic transport properties of the system. Therefore, the dual dopants (indium and antimony) show a coupled effect of improvement in the density of state near the Fermi level and reduction in the conduction band minimum, thus enhancing electron density. Numerically, it is demonstrated that the dual doping favors acoustic phonon scattering and thus drastically reduces the thermal conductivity.

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\begin{matrix} (γ) = \frac{15 ε}{a S_{cryst}} \end{matrix}

where a is the lattice constant, ε is the microstrain, and S cryst is the average crystallite size.…”

Section: Resultsmentioning

confidence: 99%

“…Similarly, the microstrain decreases with doping which is expected and concurrent with reported studies. [21,44] The dual dopants-induced lattice dislocation (γ) is numerically calculated using Equation (4) [8] and the results is shown in…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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“…To improve efficiency, SnS doped with Ag, , Bi, Sb, ,− Cu, , and In ,, as well as Al-doped SnS for solar cell applications have been investigated. Sb-doped SnS has been deposited using an atomic layer deposition for developing an n-type SnS material necessary for p–n SnS homojunctions in an attempt to lower recombination losses at the n–p interface, resulting in higher efficiencies of the solar cell .…”

Section: Introductionmentioning

confidence: 99%

Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

et al. 2015

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Semiconducting tin sulfide (SnS) was deposited electrochemically from electrolytes containing Sn and S precursors and conditions optimized to maximize its performance as a photoelectrode. Films composed of primarily orthorhombic SnS were electrodeposited on titanium substrates from electrolyte containing 20 mM SnSO 4 and 100 mM Na 2 S 2 O 3 at pH 2.5. For deposition a cathodic pulse of −1.25 V vs Ag/AgCl was applied for 2.75 s followed by a 0.25 s pulse of +0.25 V vs Ag/AgCl repeated for 30−45 min. The films were annealed in argon at 300°C for 3 h. The addition of SbCl 3 (<5%) to the electrolyte gave rise to doping of the SnS film with Sb which resulted in an increase in the photocurrent as well as a switch from p-to n-type semiconducting behavior in an acidified Na 2 S 2 O 3 electrolyte. Incorporation of p-type In into the films from addition of In(NO 3 ) 3 had a smaller effect on the measured photocurrent, and at higher precursor concentration (>5%) the dopants resulted in the formation of secondary phases of Sb and In oxides with reduction in the measured photocurrent. This doped SnS material could potentially be used in systems for the photoelectrochemical production of hydrogen and oxidation of organic wastewater. Density functional theory calculations supported the experimentally observed conductivity increase for photoelectrons as an Sb dopant induced curvature of the valence band. These calculations also provided an explanation to the previous experimental work where Sb doping was used to decrease the resistivity of SnS films. The combination of an automated electrodeposition of an earth abundant metal sulfide with the theoretical calculations to guide the synthesis is an exemplar of how to improve the efficiency of SnS-based solar energy conversion materials. ■ INTRODUCTIONThe economical capture and conversion of solar photons requires materials and structures that are inexpensive and efficient at converting solar photons to electricity or solar fuels. 1,2 A wide range of semiconducting materials, including metal oxides, phosphides, selenides, sulfides, tellurides, and amorphous and crystalline silicon, have been investigated with varying degrees of success. 3 When considering semiconductor materials for a direct solar energy harvesting, two important criteria are (1) the potential for high solar-to-electrical or solar-to-hydrogen conversion efficiency and (2) earth abundance and cost in bulk quantities of the corresponding material components. 3 In addition, it is desired to synthesize these materials using inexpensive and scalable techniques, such as electrodeposition.Certain metal sulfides satisfy both criteria as they have high theoretical solar energy conversion efficiencies (∼24%) and are present in large numbers of minerals. 4 Sulfide-based compound semiconductors have long been the subject of investigation for electronic and optical applications, including FeS 2 , Cu 2 S, Cu 2 ZnSnS 4 (CZTS), RuS 2 , and CuInS 2 . 5−7 Several of these, such as FeS 2 , Cu 2 S, Co, and Cu 2 ZnSnS 4 (CZTS), are comp...

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“…SnS thin films with a direct energy band gap of ∼1.30–1.70 eV and a high absorption coefficient of 10 4 –10 5 cm –1 are popular materials to be used in thin-film solar cells . Although SnS has an ideal energy band gap and a high refractive index, the intrinsic electrical resistance and low charge carrier avoid its utilization in solar cell applications . In order to improve the electrical conductivity and charge carriers, SnS is doped with metallic elements such as silver (Ag), antimony (Sb), bismuth (Bi), indium (In), and copper (Cu). − …”

Section: Introductionmentioning

confidence: 99%

“…11 Although SnS has an ideal energy band gap and a high refractive index, the intrinsic electrical resistance and low charge carrier avoid its utilization in solar cell applications. 12 In order to improve the electrical conductivity and charge carriers, SnS is doped with metallic elements such as silver (Ag), antimony (Sb), bismuth (Bi), indium (In), and copper (Cu). 13−19 Bommireddy et al have investigated the optical and electrical properties of Cu-doped SnS NPs synthesized with the sol−gel method.…”

Section: ■ Introductionmentioning

confidence: 99%

Correlation of Physical Features and the Photovoltaic Performance of P3HT:PCBM Solar Cells by Cu-Doped SnS Nanoparticles

et al. 2021

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In this research work, un- and copper (Cu)-doped tin sulfide (SnS) nanoparticles (NPs) with various Cu concentrations were synthesized by the ultrasonic method and added to the active layer of polymer solar cells with the ITO/PEDOT:PSS/P3HT:PCBM/Ag–Al configuration. The structural, optical, and electrical properties related to the effect of these NPs on cell performance were investigated. X-ray diffraction of these NPs indicates the formation of orthorhombic polycrystalline SnS. The field emission scanning electron microscopy image showed that the un- and Cu-doped SnS NPs were spherical particles with a size less than 100 nm. Optical analysis of the cells shows that the optical energy band gap decreases due to the presence of NPs. The electrical properties of the samples, such as diode coefficient (n), reverse saturation current, turn-on potential (V t), and mobility (μ), were measured using the J–V curve at the dark condition. Electrical characterization of the samples showed that the performance of the cells was improved by adding SnS NPs to the active layer.

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Influence of In-doping on resistivity of chemical bath deposited SnS films

Cited by 35 publications

References 11 publications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

Correlation of Physical Features and the Photovoltaic Performance of P3HT:PCBM Solar Cells by Cu-Doped SnS Nanoparticles

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Influence of In-doping on resistivity of chemical bath deposited SnS films

Cited by 35 publications

References 11 publications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

Correlation of Physical Features and the Photovoltaic Performance of P3HT:PCBM Solar Cells by Cu-Doped SnS Nanoparticles

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Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties