Influence of illumination angle on the output parameters of a silicon photomultiplier

Abstract

The influence of supply voltage on the photosignal value and signal-to-noise ratio has been studied while changing the incidence angle of optical radiation on the photosensitive surface of Ketek PM 3325, ON Semi FC 30035, and KOF5-1035 silicon photomultipliers. A scheme of the installation and a research technique are given. An installation scheme and a research technique have been given.The magnitude of the photosignal of the studied photodetectors was measured as a function of the magnitude of the overvoltage, and the signal-to-noise ratios were determined. The photosignal values of the studied photodetectors have been conducted as a function of overvoltage value, and the signal-to-noise ratios have been determined.It has been established that a flat vision angle of silicon photomultipliers depends on the photodetector supply voltage. Diagrams of changing the photosignal values from the incidence angles of optical radiation on the photosensitive surface of photodetectors have been given.It has been found that at supply voltages exceeding the breakdown voltage by no more than 1 V, the maximum deviation of the incidence angle of optical radiation on the photosensitive surface of silicon photomultipliers within a flat vision angle leads to a decrease in the signal-to-noise ratio to at least 60 % of the maximum value for KOF5-1035 and not more thant 80 % for Ketek PM 3325 and ON Semi FC 30035.The dependences of the signal-to-noise ratio on incidence angle of optical radiation on a photosensitive surface for various overvoltages have been given. The results of this article can be applied in the development and design of instruments and devices for detecting optical radiation based on silicon photomultipliers.