Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

Fu, S. P.; Lin, Tung-Ching; Su, Wen; Shieh, Chen-Yu; Chen, Y. F.; Chang, Chin An; Chen, N. C.; Chang, P.

doi:10.1063/1.2204327

Cited by 12 publications

(6 citation statements)

References 30 publications

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“…Indeed, the post-growth RTA treatments lead to a narrowing of the FWHM from 87 meV of the as-grown sample to 33 meV of the sample annealed at 875 °C. It should be noted that a similar behavior has been previously reported for InAs/GaAs QD [57] and attributed to the spectral narrowing due to the improved QD size homogeneity after interdiffusion as well as the reduction of grown-in defect density around QDs [5,58].…”

Section: Coulsupporting

confidence: 81%

“…We think that an accurate modeling of the strain profile is an essential prerequisite for electronic structure calculations, and also for the better understanding of the self-assembled QD growth. Moreover, to achieve a QD with tailored features, for the realization of novel optoelectronic devices, the control of the annealing treatment is of prime importance [59][60][61][62]. In this framework, our theoretical simulations offer a precise picture of the effect of interdiffusion and strain on band profiles in self-assembled InAs/ GaAs QDs.…”

Section: Discussionmentioning

confidence: 99%

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Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Yahyaoui¹,

Sellami²,

Radhia³

et al. 2014

Semicond. Sci. Technol.

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The effect of the lattice-mismatch strain and of the charge carrier confinement profile, on the optical properties of thermally annealed self-assembled In x Ga 1−x As/GaAs quantum dots (QDs), is theoretically analyzed by using a recently developed 40-band k.p model. First, to evaluate the composition and size of QDs as a function of thermal annealing conditions, we model the In/Ga interdiffusion by a Fickian diffusion. Second, we investigate the decrease of the strain effects on the carrier confinement potentials with annealing by solving the Schrödinger equation separately for electrons and holes. It is clearly found that the strain strongly modifies the QD potential profile, leading to a different electron and hole energy distribution. Finally, we carry on a comparison between theoretical calculations and photoluminescence (PL) experimental results performed in thermal annealed samples. A good agreement is obtained for the energy blueshift and the linewidth narrowing of the PL spectra measured on annealed QD ensemble. These results prove the relevance of the present approach to describe the optoelectronic properties of the nanostructures through the post-growth thermal annealing treatment.

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Section: Coulsupporting

confidence: 81%

Section: Discussionmentioning

confidence: 99%

Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Yahyaoui¹,

Sellami²,

Radhia³

et al. 2014

Semicond. Sci. Technol.

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“…1,2 Optical and electrical characterizations of these films revealed that the optical band gap of the film is much smaller (0.6-0.7 eV) than the previously accepted value (1.9 eV) 3 and they possess considerably higher electron mobilities. Additionally, InN is a very good potential material for electro-optical devices such as infrared laser diodes for optical communication and high efficient solar cells combined with other group III-nitride semiconductors such as AlN and GaN.…”

Section: Introductionmentioning

confidence: 77%

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Chen

Kuo

Lai

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy AIP Advances 4, 027114 (2014); 10.1063/1.4866445 Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecularbeam epitaxy Appl. Phys. Lett. 86, 121914 (2005); 10.1063/1.1890482 Growth mechanism of AlN by metal-organic molecular beam epitaxy J. Appl. Phys. 96, 6272 (2004); 10.1063/1.1813623Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy Indium nitride films grown at various growth temperatures were prepared on GaN buffer layers using self-designed plasma-assisted metal-organic molecular beam epitaxy. The influence of substrate temperature on film crystallinity, surface morphology, optical, and electrical properties was studied using x-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), UV/VIS/NIR spectrophotometer, and Hall measurement. The results show that the InN films grown on the GaN template at 500 o C are of good quality, and the full width at half maximum of InN(0002) x-scan is around 1000 arc sec. The SEM images revealed that the average growth rate is 1.1 lm=h, which is comparable to the conventional epitaxial techniques. These results indicate that the electronic properties and crystalline quality can be significantly improved by optimizing the growth temperature.

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“…Pettinari et al discovered that hydrogen ion (H + ) acted as a donor in hydrogenated InN film when hydrogenation was performed at 300 • C [26]. In contrast, Fu et al reported that the carrier density was decreased with hydrogen plasma treatment time at 300 • C, after which the carrier density increased with an increase in treatment time [27]. In our experiment, hydrogen plasma treatment was conducted at room temperature; therefore, the hydrogen ion could not act as a donor due to the low penetrating probability of H + into the InN NRs.…”

Section: Resultsmentioning

confidence: 99%

Hydrogenation-produced In₂O₃/InN core–shell nanorod and its effect on NO₂ gas sensing behavior

et al. 2020

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In this work, for the first time, we have made InN/In2O3 core–shell heterostructure by hydrogen plasma treatment. InN nanorods (NRs) were grown by using plasma-assisted molecular beam epitaxy, and hydrogen plasma treatment was performed by using reactive ion etching at room temperature. From x-ray photoemission spectroscopy studies, it was observed that the bonding partner of In changes from N to O and N 1s completely disappeared in the hydrogenated InN NRs. Furthermore, high-resolution transmission electron microscopy revealed the formation of InN/In2O3 core–shell NRs by hydrogenation plasma treatment. The resistance of pristine InN NRs was decreased in NO2 ambient. Interestingly, the resistance of the InN/In2O3 core–shell was increased while introducing NO2 gas. InN NR surface exhibits downward band bending due to the electron accumulation, in NO2 ambient, and the surface band bending was decreased due to the increase in the bulk conduction channel. This reversed gas sensing behavior in InN/In2O3 core–shell NRs was attributed to the increase in depletion layer while reducing the conduction channel width by the absorption of NO2. The InN/In2O3 coreshell NRs exhibited a response of 22.43% at 50 °C, which was 5.11 times higher than that of pristine InN NRs.

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Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

Cited by 12 publications

References 30 publications

Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Hydrogenation-produced In₂O₃/InN core–shell nanorod and its effect on NO₂ gas sensing behavior

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Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

Cited by 12 publications

References 30 publications

Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Hydrogenation-produced In2O3/InN core–shell nanorod and its effect on NO2 gas sensing behavior

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Hydrogenation-produced In₂O₃/InN core–shell nanorod and its effect on NO₂ gas sensing behavior