Influence of hydrogen reduction on photoelectrochemical behavior of anodic oxidized n-TiO2-layers

Hartig, K.; Getoff, N.; Kotchev, K.D.; Kanev, St.

doi:10.1016/0165-1633(83)90039-4

Cited by 13 publications

(1 citation statement)

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“…Polycrystalline n-TiO~ has been largely studied as a semiconducting electrode in photoelectrochemical cells. Several techniques for the preparation of the photoanodes are found in the literature, namely, thermal oxidation (1)(2)(3)(4)(5)(6)(7)(8), anodic oxidation (8)(9)(10)(11)(12)(13)(14)(15)(16), chemical vapor deposition (8,9,14,(17)(18)(19)(20)(21) and plasma-enhanced chemical vapor deposition (22), sputtering (23,24), pressed and sintered powders (2,25,26), and screen printing (27).…”

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Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Parent

Dodelet

Ross

et al. 1985

J. Electrochem. Soc.

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TiO2 photoanodes have been prepared by the plasma spray technique on titanium, graphite, and alumina substrates. 25–30 μm thick coatings display a good adhesion to the substrate and a highly textured surface. Dark and photoelectrochemical properties of the photoanodes have been measured in oxygen‐saturated solutions of normalNaOH at pH 13. It is shown that the performances of the electrodes are quite insensitive to the plasma power or to the TiO2 powder granulation but are very sensitive to the purity of the spraying material, to the substrate, and also to a heat‐treatment ( H2 or Ar at 800°C followed by a rapid quenching in air). The maximum quantum yield is obtained at 300 nm for heat‐treated TiO2 . It is about 40% on alumina and 70% on the titanium. The heat‐treatment affects the conductivity, σ, and the surface density of hydroxyl groups, NOH , of the coatings. For heat‐treated TiO2 , typical values are σ=2.4 false(normalΩ‐normalcm)−1 and NOH=2.8×1015 cm−2 . For untreated TiO2 , typical values are σ=30.6 false(normalΩ‐normalcm)−1 and NOH=2.1×1016 cm−2 . The J‐V curves of heat‐treated TiO2 sprayed on alumina extend anodically up to 9.5V (vs. SCE), where film breakdown occurs. For the same film sprayed on titanium and graphite, the anodic dark behavior is similar to that observed for the bare substrates. It is concluded that polycrystalline TiO2 coatings, produced by the plasma spray technique, can display photoelectrochemical and dark characteristics similar to the ones obtained with single‐crystal material.

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confidence: 99%

Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Parent

Dodelet

Ross

et al. 1985

J. Electrochem. Soc.

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Laser Flash Induced Charge Carrier Transfer in Polycrystalline n‐TiO₂ Semiconductors

Hartig

Grabner

Getoff

et al. 1985

Ber Bunsenges Phys Chem

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Photocurrent and photovoltage transients have been measured at n‐TiO2 electrolyte junctions by means of ns‐laser pulse excitation. Two different kinds of build‐up, independent of excitation intensity and external resistance have been observed. It is concluded that the charge carrier transit through the depletion layer is the rate determining step if traps or grain boundaries of the microcrystals acting as such, play a significant role. The result is a longer rise time of either photocurrent or ‐voltage, which exceeds the laser pulse width by orders of magnitude.

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Photoelectrochemical solar cells based on TiS₂/TiO₂(TiO_xS_y) photoelectrodes

Babu

Srivastava

1988

Cryst. Res. Technol.

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A new photoelectrode of TiS,/TiO, alloy with a possible new TiO,S,. phase has been synthesized for the first time in the present investigation. This photoanode exhibits improved photoelectrochemical (PEC) response as compared to either TiS, or TiO, photoelectrode. With this new photoelectrode high PEC conversion efficiency is evidenced by large photovoltage (840 mv) and significantly high photocurrent density (40 mA/cm2). The photovoltage obtained in the present system is significantly high and the photocurrent density is the highest reported so far for the TiO, based systems. It has been suggested that the enhancement in photoactivity in the present system is due to the reduced band gap of TiO,S, phase in TiS,/TiO, alloy material. Such a band gap reduction is thought to be facilitated by the downward movement of the valence band of titanium disulphide which is made up of chalcogen atoms through substitution of sulphur atoms by oxygen atoms.

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Influence of hydrogen reduction on photoelectrochemical behavior of anodic oxidized n-TiO2-layers

Cited by 13 publications

References 13 publications

Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Laser Flash Induced Charge Carrier Transfer in Polycrystalline n‐TiO₂ Semiconductors

Photoelectrochemical solar cells based on TiS₂/TiO₂(TiO_xS_y) photoelectrodes

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Influence of hydrogen reduction on photoelectrochemical behavior of anodic oxidized n-TiO2-layers

Cited by 13 publications

References 13 publications

Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Plasma‐Sprayed Semiconductor Electrodes: Photoelectrochemical Properties of TiO2

Laser Flash Induced Charge Carrier Transfer in Polycrystalline n‐TiO2 Semiconductors

Photoelectrochemical solar cells based on TiS2/TiO2(TiOxSy) photoelectrodes

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Product

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Laser Flash Induced Charge Carrier Transfer in Polycrystalline n‐TiO₂ Semiconductors

Photoelectrochemical solar cells based on TiS₂/TiO₂(TiO_xS_y) photoelectrodes