Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

Tsatsulnikov, A. F.; Lundin, W. V.; Заварин, Е. Е.; Николаев, А. Е.; Сахаров, А. В.; Usov, S. O.; Musikhin, Yu. G.; Gerthsen, D.

doi:10.1134/s1063782611020230

Cited by 9 publications

(5 citation statements)

References 6 publications

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“…(b), the growth temperature for the 12‐stacked InGaN layer of the GSL was decreased with a step of 10 °C from 925 to 805 °C, leading to a gradual increase of In composition from 1 to 25% as the InGaN layer nears the active MQW region. Immediately after the growth of each of the InGaN layers with thicknesses of ∼2 nm, an H 2 treatment was performed to dissolve the In atoms in half of the InGaN layer, giving rise to the formation of a GaN layer in the GSL . The five‐pair InGaN/GaN MQW‐active region was then grown at the temperatures of 925 and 805 °C for the barriers and wells with indium composition of 25%, respectively, followed by the growth of a 200 nm‐thick p‐type GaN layer.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

Park

Jung

Ji³

2016

Physica Status Solidi (a)

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In this study, InGaN-based green light-emitting diodes (LEDs) with a graded-superlattice (GSL) layer inserted between the 3 mm thick n-type GaN and the multiple quantum wells (MQWs) were studied numerically and experimentally. The simulated results indicate that the use of GSL inserting layer consisting of 12-stacked InGaN/GaN layers leads to the enhancement of electron injection into the MQWs resulting in the increase of radiative recombination rate, suppressing the electron overflow to the p-GaN side. The photoluminescence and output power of the GSL LEDs show a 73.5 and 42.5%, respectively, in a comparison with the reference LEDs that has no inserting layer. This improvement with the GSL LEDs indicates that the GSL insertion layer acts not only as a stressrelaxing buffer layer releasing the residual stress in MQWs, but also as an electron cooler enhancing the electron capture rate in MQWs.

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Section: Methodsmentioning

confidence: 99%

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

Park

Jung

Ji³

2016

Physica Status Solidi (a)

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“…H 2 and N 2 are used as a carrier gas in different periods of the growth process. Conventionally, the N 2 is used as carrier gas in the process of InGaN layer growth because H 2 has a corrosive effect on InGaN layer which will largely decrease the efficiency of In incorporation [11,12]. However, H 2 as carrier gas can greatly improve the surface mobility of atoms and reduce the impurity concentration.…”

Section: Methodsmentioning

confidence: 99%

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

et al. 2019

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A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a twostep cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H 2 at the lower temperature period in the twostep cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly.

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“…Admixing of hydrogen during the GI after the deposition of an InGaN QW stimulates phase separation while admixing of hydrogen directly during the growth of an InGaN QW suppresses phase separation. 16,17 In this study, we investigated different approaches to grow InGaN QWs, which are suitable to realize a RBS in the near UV range. The goal of our materials research is a high lateral uniformity of the individual Contributing Editor: Winston Schoenfeld a) QWs and their reproducibility during the growth of a large number of periods.…”

Section: Introductionmentioning

confidence: 99%

Resonant Bragg structures based on III-nitrides

et al. 2015

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We demonstrate a resonant Bragg structure formed by quasi-two-dimensional excitons in periodic systems of InGaN quantum wells (QWs) separated by GaN barriers. When the Bragg resonance and exciton-polariton resonance are tuned to each other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be largest for the system of 60 QWs. Owing to a high binding energy and oscillator strength of the excitons in InGaN QWs, the resonant enhancement was achieved at room temperature. The samples were grown by the metal-organic vapor-phase epitaxy (MOVPE) on GaN-on-sapphire templates. The most important technological problem of the developed structures is inhomogeneous broadening of the excitonic states due to nonuniform chemical composition of the QWs driven by InN-GaN phase separation trend. We addressed this problem by variation of the vapor pressure, growth rate, growth interactions, and admixing of hydrogen during the MOVPE. The lowest width of 74 meV at room temperature and 41 meV at 77 K was achieved for the excitonic emission line from a single InGaN QW.

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Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

Cited by 9 publications

References 6 publications

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Resonant Bragg structures based on III-nitrides

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