The competition between interface barrier in the Schottky-Mott limit and polarization driven mechanism is established during gradual formation of metal (Au)ferroelectric (BaTiO 3 ) interface. X-ray photoelectron spectroscopy provides core level energies and valence band positions in the contact region, to monitor the band alignment from the very first stages of metal deposition on BaTiO 3 . The band bending at metal/ferroelectric (FE) interface is extracted from the shift of core levels (Ba 3d, Ti 2p) as a function of the metal thickness. It is shown that the interface band alignment mechanism involves a well-defined polarization orientation washing out the bending expected from the work function difference. The sudden modification of the binding energies within ferroelectric at the first 2 ÅAu indicates that the ferroelectric compensation mechanism triggered by the metal overlayer initiates already at ultrathin top layer, while subsequent growth contributes only at a gradual correction of the potential in the FE. The emerging picture is confirmed in first-principle calculation indicating the preferences of Au to grow preferentially to different terminated regions and to stabilize distinct ferroelectric polarization.Ferroelectric materials exhibit a spontaneous polarization, which can be reversed by applying a voltage exceeding the coercive field. [1] They are used in a wide number of applications such as sensors and actuators, [2,3] in ferroelectric capacitors [4] and nonvolatile memories. [5,6] In most of these applications, the ferroelectric (FE) system is in direct contact with a metal electrode, and the device physics is strongly influenced by the metal-ferroelectric interface. Consequently, understanding the mechanism of metal/FE interface formation is of central importance in device design. Ferroelectric thin films may present a particular single-domain ferroelectric state with the polarization perpendicular to the film, which is connected to the existence of free charge carriers into the film. [7] Electrons and holes from the ferroelectric thin film may then be transferred by the internal field (P=e, where P ¼ polarization perpendicular to the surface of the FE, e ¼ e 0 e r ¼ dielectric permittivity of the FE)