Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells

Hussain, Shahzada Qamar; Kim, Sunbo; Ahn, Shihyun; Balaji, Nagarajan; Lee, Youngseok; Lee, Jaehyung; Yi, Junsin

doi:10.1016/j.solmat.2013.11.031

Cited by 44 publications

(26 citation statements)

References 21 publications

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“…In addition, the interfacial electric field can reduce the work function of ITO, which would favor light‐generated electron extraction. [ 34,35 ] To further explore the ITO work function versus device performance, a simulated work was conducted. As shown in Figure S9, Supporting Information, the calculated results indicate that the performance of devices improved with a decreased work function of the front ITO.…”

Section: Resultsmentioning

confidence: 99%

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

et al. 2021

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Heterojunction crystal‐silicon (c‐Si) solar cells generate current from harvesting light via sweeping excited carriers away under built‐in asymmetry through amorphous silicon layers. However, loss of energy beyond the bandgap is known to hinder their efficiency. Herein, a strategy is provided to convert short‐wavelength energy into a polarization electrical field and the light dielectric antenna effect, where enhanced surface passivation and carrier collection occur simultaneously. By depositing an ultrathin polarizable nanoparticle layer on a transparent conducting oxide (TCO), a light‐induced electrical field is built up by light‐harvesting accumulation, which benefits for c‐Si surface passivation. An enchanting open‐circuit voltage (Voc) of 736.6 mV for the light‐induced field‐effect solar cell is achieved. In addition, the high‐index dielectric nanoparticles generate more photons to be absorbed in the long‐wavelength in c‐Si solar cells, which results in enhanced short‐circuit current (Jsc). As a result, benefiting from the light‐induced building‐up extra field and dielectric antenna effect, the device yields a power conversion efficiency of 22.41%, with the maximal improvement of Voc (≈4 mV), Jsc (≈0.4 mA cm−2), and fill factor (≈1%), respectively. This work provides a strategy to enhance solar cell efficiency by continuously harvesting beyond‐bandgap light to offer an additional asymmetrical field and the light antenna effect.

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Section: Resultsmentioning

confidence: 99%

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

et al. 2021

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“…Bare Eagle glass showed 92% transmittance in the visible wavelength (400~800) nm region. All the ITO films showed more than 85% transmittance in the vis-NIR (400~1,100) nm wavelength region [1][2][3][4][5]20] …”

Section: Resultsmentioning

confidence: 99%

“…ITO (indium tin oxide) films are widely used as front TCO (transparent conductive oxide) in LCDs (liquid-crystal displays), OLEDs (organic light emitting devices), and solar cells due to their low resistivity, high transmittance in the visible wavelength region, and wide optical band gap [1][2][3][4]. The wide application of ITO films have resulted in an extensive study, both on their preparation and characterization.…”

Section: Introductionmentioning

confidence: 99%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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“…For the development of an efficient SHJ cell, it is necessary to optimize the LiF x layer. Our simulations results were based on experimental data extracted in the form of (n, k) files for LiF x films and plugged into AFORS-HET for the purpose of simulation [27,34,35]. For the generation of experimental data, we deposited lithium fluoride (LiF x ) in our lab using thermal evaporation.…”

Section: Simulation Modelmentioning

confidence: 99%

Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

et al. 2020

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In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.

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Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells

Cited by 44 publications

References 21 publications

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

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