Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Nayfeh, Hasan M.; Leitz, Christopher; Pitera, Arthur J.; Fitzgerald, Eugene A.; Hoyt, Judy L.; Antoniadis, D.A.

doi:10.1109/led.2003.810885

Cited by 56 publications

(22 citation statements)

References 13 publications

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“…4, the same EF dependence holds for both medium and large effective normal fields E eff . Our results agree with those showed in [5] and [10] and, in particular, they do not show a saturation of the enhancement factor as reported in [3] and predicted by the numerical simulations of [2].…”

Section: Resultssupporting

confidence: 93%

On the electron mobility enhancement in biaxially strained Si MOSFETs

Driussi

Esseni

Selmi

et al. 2008

Solid-State Electronics

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Section: Resultssupporting

confidence: 93%

On the electron mobility enhancement in biaxially strained Si MOSFETs

Driussi

Esseni

Selmi

et al. 2008

Solid-State Electronics

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“…For low vertical electric field values, the mobility overshoots the universal curve, suggesting that a strained channel does indeed exist. But the amount of overshoot and the fact that, at very low fields an abrupt mobility drop occurs, is consistent with the presence of Coulomb scattering [8], [9]. This could mean the existence of excessive impurities or defects in the strained channel.…”

Section: Discussionmentioning

confidence: 52%

“…Extracted low-field average effective drift mobility, plotted against the effective vertical electric field (square points). Also shown, the universal bulk-Si mobility and the strained silicon mobility from [8].…”

Section: Profile Extractionsmentioning

confidence: 99%

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Average Drift Mobility and Apparent Sheet-Electron Density Profiles in Strained-Si–SiGe Buried-Channel Depletion-Mode n-MOSFETs

Michelakis

Vilches

Papavassiliou

et al. 2004

IEEE Trans. Electron Devices

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Abstract-In this paper, we describe a simple method to extract the average drift mobility and the apparent sheet electron density versus the applied gate voltage and the vertical effective electric field in strained-Si-SiGe buried-channel depletion-mode metal-oxide semiconductor field-effect transistors (n-MOSFETs). For this, we adapted an established technique used in evaluating mobility profiles in Schottky-gate MESFETs, by taking into account the existence in our devices of the gate-oxide capacitance OX and by introducing an effective junction capacitance , which follows the ideal Schottky's depletion approximation. By applying our method on fabricated transistors we were able to obtain the average drift mobility profile versus the applied vertical effective field and monitor values as high as 618 cm 2 /Vs. We also extracted the apparent sheet electron density profile with values reaching as high as 3 4 10 12 cm 2 . Although the layer design had not been optimized, the results show mobility enhancement in the strained silicon channel and, to our view, point to a unique regime of operation for these devices, which should benefit the low-power and low-voltage applications. The proposed method could be used as a nondestructive tool for monitoring the transport properties in Si-SiGe modulation-doped MOSFETs. It could also serve as a useful platform for determining explicit modeling links between the layer design and the device performance.Index Terms-Drift mobility, heterostructure, metal-oxide semiconductor field-effect transistor (MOSFET) mobility, MOS-MODFET, SiGe, silicon, strained-si MOSFETs.

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“…Strained silicon (Si) field effect transistors (FETs) have recently been proposed [1][2][3][4][5][6][7][8][9][10]. Their driving capability is superior to that of the pure Si-based FETs.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

Lee

Chou

2004

J Comput Electron

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In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (R SiGe ) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (∼8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V t ), the drain induced barrier height lowering (DIBL), and the gate capacitance (C G ) are estimated with respect to different gate length (L G ), gate bias (V G ), and R SiGe . For short channel effects, such as V t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one.

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Cited by 56 publications

References 13 publications

On the electron mobility enhancement in biaxially strained Si MOSFETs

On the electron mobility enhancement in biaxially strained Si MOSFETs

Average Drift Mobility and Apparent Sheet-Electron Density Profiles in Strained-Si–SiGe Buried-Channel Depletion-Mode n-MOSFETs

Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

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