Influence of heat-treatment on the morphological and electrical properties of the GaAs epilayer-substrate interface

Kaufmann, L.M.F.; Heime, K.; Burchard, W.-G.

doi:10.1016/0022-0248(76)90142-1

Journal of Crystal Growth

1976

DOI: 10.1016/0022-0248(76)90142-1

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Influence of heat-treatment on the morphological and electrical properties of the GaAs epilayer-substrate interface

L.M.F. Kaufmann¹,

K. Heime²,

W.-G. Burchard³

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Cited by 12 publications

(2 citation statements)

References 27 publications

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“…The thicknesses of disturbed layers found here are in good agreement with the results reported in [1,7,9] and [10].…”

supporting

confidence: 92%

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Surface layers in heat-treated GaAs

Castaño

Piqueras

Muñoz

1978

Rev. Phys. Appl. (Paris)

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2014 Cet article traite des résultats obtenus en faisant des recuits pendant des durées brèves, d'échantillons de GaAs non dopés à haute résistivité et d'échantillons dopés au Se, placés dans un courant de H2 et sous des températures variant de 750 à 850°C. Les variations de la conductivité en surface ont été déterminées en mesurant la hauteur de barrière Schottky. Après les recuits, les échantillons non dopés présentent une double couche n-p à la surface, alors que les échantillons dopés au Se montrent la présence de nouveaux accepteurs.Abstract. 2014 Short-time heat treatments of undoped high-resistivity and Se-doped GaAs samples have been performed in an H2 flow at temperatures from 750 °C up to 850 °C. Surface conductivity changes have been determined by Schottky barrier measurements. After annealings, undoped samples showed a n-p double layer at the surface, while in Se-doped samples only new acceptors were detected.

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“…The thicknesses of disturbed layers found here are in good agreement with the results reported in [1,7,9] and [10].…”

supporting

confidence: 92%

“…The influence of heat treatments, in an H2 flow, on the morphological and electrical properties of the GaAs epilayer-substrate interface has been studied by Kaufmann and Heime [7]. They performed heat treatments in the GaAs substrates to determine the thickness of the disturbed surface layer as a function of the annealing time.…”

mentioning

confidence: 99%

Surface layers in heat-treated GaAs

Castaño

Piqueras

Muñoz

1978

Rev. Phys. Appl. (Paris)

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Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions

Franzosi¹,

Ghezzi²,

Gombia³

1980

Appl. Phys.

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The growth of buffered GaAs mesfet structures by LPE

Houston

1980

JEM

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Influence of heat-treatment on the morphological and electrical properties of the GaAs epilayer-substrate interface

Cited by 12 publications

References 27 publications

Surface layers in heat-treated GaAs

Surface layers in heat-treated GaAs

Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions

The growth of buffered GaAs mesfet structures by LPE

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