Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals

Mirowska, A.; Orłowski, Witold M.

doi:10.12693/aphyspola.122.1111

Cited by 6 publications

(1 citation statement)

References 15 publications

(13 reference statements)

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“…The native acceptor defects V Ga and Ga Sb will be compensated by forming the main ionized acceptors in the structure of V Ga Te Sb , additional acceptor defects in the structure of V Ga Ga Sb V Ga and V Ga Ga Sb Te Sb will also develop as doping level increases. 30,31) The above could be responsible for the transformation of magnitude and distribution of FWHM and residual stress in L1, L2 and L3 wafers as the concentration of Te dopant increases. Thermally-induced stresses in single-crystal substrates will intensify the problems of breakage and wafer warp, deteriorate the properties of the free surfaces used for epitaxial deposition, and modify the electrical and optical properties due to piezoelectric and photoelastic effects.…”

Section: Resultsmentioning

confidence: 99%

Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Zhou¹,

Zhao²,

Xie³

et al. 2021

Jpn. J. Appl. Phys.

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Raman spectroscopy has been used to evaluate residual stress distribution across GaSb single crystal wafers with different Te doping concentrations grown by liquid encapsulated Czochralski (LEC) method. Undoped GaSb wafers grown by LEC and vertical temperature gradient freezing method were used as reference wafers for comparison analysis. The residual stress increases but its distribution uniformity improves in LEC-GaSb wafers with the concentration of Te dopant increasing. Moreover, annealing at temperature 650 °C can effectively increase its distribution uniformity and results in an improvement of the flatness. The results also suggest that the flatness of GaSb wafers is better when Te doping concentration is controlled within a certain range.

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Section: Resultsmentioning

confidence: 99%

Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Zhou¹,

Zhao²,

Xie³

et al. 2021

Jpn. J. Appl. Phys.

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Fisher information of a vector potential for time‐dependent Feinberg–Horodecki equation

Onate

Onyeaju

2020

Int J of Quantum Chemistry

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The time‐dependent Feinberg–Horodecki equation in the presence of a special Mie‐type pseudoharmonic potential was solved and the quantized momentum with the corresponding wave functions were obtained with the supersymmetric approach. The Fisher information for both the time and the momentum space were calculated via expectation values of time and momentum. The effect of the dissociation energy, the equilibrium time point and the quantum number respectively on the Fisher information were studied in detail. The result was applied to five molecules. The results obtained for the time‐dependent Feinberg–Horodecki equation followed the trend of the results obtained for the time‐independent Schrödinger equation.

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Approximate solutions of the spin and pseudospin symmetries under coshine Yukawa tensor interaction

Onate,

Okon,

Omugbe

et al. 2024

Sci Rep

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The approximate solutions of the Dirac equation for spin symmetry and pseudospin symmetry are studied with a coshine Yukawa potential model via the traditional supersymmetric approach (SUSY). To remove the degeneracies in both the spin and pseudospin symmetries, a coshine Yukawa tensor potential is proposed and applied to both the spin symmetry and the pseudospin symmetry. The proposed coshine tensor potential removes the energy degenerate doublets in both the spin symmetry and pseudospin symmetry for a very small value of the tensor strength (H = 0.05). This shows that the coshine Yukawa tensor is more effective than the real Yukawa tensor. The non-relativistic limit of the spin symmetry is obtained by using certain transformations. The results obtained showed that the coshine Yukawa potential and the real Yukawa potential has the same variation with the angular momentum number but the variation of the screening parameter with the energy for the two potential models differs. However, the energy eigenvalues of the coshine Yukawa potential model, are more bounded compared to the energies of the real Yukawa potential model.

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Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals

Cited by 6 publications

References 15 publications

Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Fisher information of a vector potential for time‐dependent Feinberg–Horodecki equation

Approximate solutions of the spin and pseudospin symmetries under coshine Yukawa tensor interaction

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