Influence of grain boundaries on the figure of merit of undoped and Al, In, Sn doped ZnO thin films for photovoltaic applications

Yıldız, Abdullah; Uzun, Süleyman Utku; Serin, N.; Seri̇n, Tülay

doi:10.1016/j.scriptamat.2015.10.004

Cited by 41 publications

(8 citation statements)

References 18 publications

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“…For the barrier height φ B , we first note that the obtained value ranges between 0.12 and 0.25 eV. These values are lower than the typical barrier height of 0.7 -0.9 eV observed at the grain boundaries of annealed ZnO[15,36], for which the doping in the grains is as low as 10 The low value can be explained by the high doping in ZnO nanowires due to intrinsic defects, as observed in ZnO thin film obtained by sol-gel, for which barrier height as low as 0.176 eV have been extracted[37].Figures 5(c) and 5(d) show that φ B depends both on W and L, which is surprising at first since the barrier height at each junction should not depend on the geometry of the network. The dependence in L shows first a decrease from 2 to 5 µm, and then is almost independent on L for spacing larger than 5 µm.…”

mentioning

confidence: 63%

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Caicedo

Leturcq

Raskin

et al. 2019

Sensors and Actuators B: Chemical

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Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate

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mentioning

confidence: 63%

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Caicedo

Leturcq

Raskin

et al. 2019

Sensors and Actuators B: Chemical

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“…Salam et al reported that excessive doping of ZnO structure generates increased strain to the crystal structure and reduces the electron mobility, leading to enhanced resistivity [65]. Yildiz et al mentioned that conductivity reduction at high Sn concentrations (> 2 at.%) may be associated with carrier traps at grain boundaries [66]. Shelke et al reported that doping at a certain amount of dopant may form a film with less compressive stress and enhanced conductivity [67].…”

Section: Conductivity and Resistivity Measurementmentioning

confidence: 99%

Modulation of Sn concentration in ZnO nanorod array: intensification on the conductivity and humidity sensing properties

Ismail

Mamat

Banu

et al. 2018

J Mater Sci: Mater Electron

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Tin (Sn)-doped zinc oxide (ZnO) nanorod arrays (TZO) were synthesized onto aluminum-doped ZnO-coated glass substrate via a facile sonicated sol-gel immersion method for humidity sensor applications. These nanorod arrays were grown at different Sn concentrations ranging from 0.6 to 3 at.%. X-ray diffraction patterns showed that the deposited TZO arrays exhibited a wurtzite structure. The stress/strain condition of the ZnO film metamorphosed from tensile strain/compressive stress to compressive strain/tensile stress when the Sn concentrations increased. Results indicated that 1 at.% Sn doping of TZO, which has the lowest tensile stress of 0.14 GPa, generated the highest conductivity of 1.31 S cm −1 . In addition, 1 at.% Sn doping of TZO possessed superior sensitivity to a humidity of 3.36. These results revealed that the optimum performance of a humidity-sensing device can be obtained mainly by controlling the amount of extrinsic element in a ZnO film.

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“…Sn can also be used as a dopant in ZnO, where the Zn 2+ ion is replaced by the Sn 4+ ion, to increase the carrier concentration [19,20]. Compared with other TCOs, Sn-doped ZnO exhibits reduced conductivity owing to the high mean barrier height depending on disorder of grain boundary [21]. The ionic radii of Ga (0.062 nm) and Zn (0.074 nm) and covalent bond length of Ga-O (1.92 Å) and Zn-O (1.97 Å) are similar, resulting in low deformation of the ZnO lattice even at a high doping concentration [7,[22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

et al. 2021

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We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal–organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium–tin–oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE).

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Influence of grain boundaries on the figure of merit of undoped and Al, In, Sn doped ZnO thin films for photovoltaic applications

Cited by 41 publications

References 18 publications

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Modulation of Sn concentration in ZnO nanorod array: intensification on the conductivity and humidity sensing properties

Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

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