2018
DOI: 10.1039/c8ce01134f
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Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds

Abstract: The incorporation of P in GST forms the secondary GeP rich phase. The presence of secondary phase and point defects (Sb and P) enhanced the additional scattering effects in the system.

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Cited by 9 publications
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“…When the interaxial angle α changes from 88.2 to 90°, it enables the convergence of the original 3 L + 1 Z in the cubic structure into 4 L , and 6∑ + 6η into 12∑, which provides a potential degree of freedom for GeTe performance optimization . The nonstoichiometric equilibrium of the pristine GeTe is derived from the extremely low Ge-vacancy formation energy, , and the detectable Ge-rich phase and high carrier concentration ∼10 21 cm –3 result in high thermal conductivity and low Seebeck coefficient . The thermoelectric performance for the pristine GeTe is limited by the non-negligible drawbacks.…”
Section: Introductionmentioning
confidence: 99%
“…When the interaxial angle α changes from 88.2 to 90°, it enables the convergence of the original 3 L + 1 Z in the cubic structure into 4 L , and 6∑ + 6η into 12∑, which provides a potential degree of freedom for GeTe performance optimization . The nonstoichiometric equilibrium of the pristine GeTe is derived from the extremely low Ge-vacancy formation energy, , and the detectable Ge-rich phase and high carrier concentration ∼10 21 cm –3 result in high thermal conductivity and low Seebeck coefficient . The thermoelectric performance for the pristine GeTe is limited by the non-negligible drawbacks.…”
Section: Introductionmentioning
confidence: 99%