Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

Abstract

This paper investigates the behaviours of 4H-SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H-SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode

“…The doping concentration of the substrate is 1 × 10 19 cm −3 . The physical models for SiC FJ-SBDs are based on previous works [19][20][21][22][23] and correspond to experimental data.…”

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

“…Such test was submitted to two groups of 5 W-SBD's, the first one at room temperature (RT, 25°C), and the second one at 200°C. Since the aspect ratio between Schottky and bipolar contact is larger in SBD's [13], the effect of temperature on the current density balance can be better studied, while the results can be extensible to JBS structures at different current scales [14]. To perform such analysis, the infrared (IR) emission of the weak spots, acting as hot spots, was modulated and detected by using the Small sIgnal Modulation for Thermal Analysis (SIMTA) technique.…”