Influence of Gate Voltage Operation on Effective Mobility of Electrolyte-Gated Organic Transistors

Nketia-Yawson, Vivian; Nketia‐Yawson, Benjamin; Jo, Jea Woong

doi:10.1007/s13233-022-0075-z

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…[30,31] To improve the performance of OFETs, it is necessary to optimize the pivotal parts, including the contact electrodes, gate dielectric, and the active semiconducting layer. [35,36] Highcapacitance gate dielectric materials, such as cross-linked insulating polymers, [37][38][39] ionic composites, [40][41][42] high-k materials, [43][44][45] and polymer electrolytes, [46][47][48] have evolved for transistor technology. In this study, motivated by these early studies, we synthesized benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer for high-performance OFETs and conjugated polymer-capped perovskite transistors using conventional and electrolyte gating media.…”

Section: Introductionmentioning

confidence: 99%

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Nketia‐Yawson,

Buer,

Ahn

et al. 2023

Macromol. Rapid Commun.

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Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite‐based electronics. Particularly, the charge carrier mobility of conjugated polymer semiconductors has been deemed to be a vital figure‐of‐merit for achieving high‐performance organic field‐effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2‐b:4,5‐b']dithiophene‐based conjugated polymer in perovskite‐functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA) gate dielectric, improvements in hole mobility of 0.019 cm2 V−1 s−1 are measured using an off‐center spin‐coating technique, which exceeds those of on‐center counterparts (0.22 ± 0.07 × 10−2 cm2 V−1 s−1). Furthermore, the mobility drastically increases by adopting solid‐state electrolyte gating, corresponding to 2.99 ± 1.03 cm2 V−1 s−1 for the control, and the best hole mobility is 8.03 cm2 V−1 s−1 (average ≈ 6.94 ± 0.59 cm2 V−1 s−1) for perovskite‐functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite‐functionalized organic transistor channel, resulting from the high‐capacitance electrolyte dielectric.

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Section: Introductionmentioning

confidence: 99%

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Nketia‐Yawson,

Buer,

Ahn

et al. 2023

Macromol. Rapid Commun.

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Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter

Jeong

Moon

Lee

et al. 2023

Adv Elect Materials

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transistors (OECTs) which are an ideal platform for biological sensing, neuromorphic computing, and logic circuits by connecting solid electronics and soft biological systems. [1] A typical OECT device is composed of a redox-active OMIEC active layer, electrolyte (dielectric), and the following three types of electrodes: gate, source, and drain. Upon applying a gate voltage, an electrochemical oxidation or reduction reaction occurs within the OMIEC layer, and counter ions from the electrolyte dielectric penetrate into the electrochemically doped OMIEC films to compensate the charge generation. [2] Signal amplification of an OECT device is often defined by the transconductance, g m = ∂I D /∂V G (where I D and V G indicate the drain current and gate voltage, respectively). Two parameters, which are carrier mobility (µ) and volumetric capacitance (C*), are usually evaluated to examine the performance of an OECT active layer material, as proposed by Inal et al. [3] A parallel-type OECT (p-OECT) device architecture with an aqueous electrolyte (NaCl, KCl) solution as a gate dielectric has been widely utilized. [4] The material design of semiconducting molecules was also extensively studied to optimize both electrical and ionic conductivity; for example, oligoethylene glycol (OEG) side chains are often incorporated to facilitate ion transport and accommodate more ionic species from the electrolyte to increase the volumetric capacitance. [5] In p-OECTs, the aqueous electrolyte solution is dropped on top of the active layer for device operation; however, water is susceptible to evaporation during device operation, which changes the concentration of the ionic electrolyte species and is likely to oxidize the active layer by dissolved oxygen, leading to unstable device operation and significant drift of the signal. [6] Therefore, OECT devices are considered for disposable, single-use, and short-term biosensing applications. In addition, the aqueous OECT devices based on OEG-substituted materials suffer from poor device stability and reversibility owing to the uncontrollable uptake of a large amount of water molecules, which causes the destruction of polymer alignment, detachment of the polymer film from the electrode, and deteriorated electrical properties. [7] In addition, device architecture is an important consideration for further optimizing the OECT performance. In vertical OECTs (v-OECTs), the OMIEC semiconducting layer is Parallel-type organic electrochemical transistors (p-OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte-based p-OECTs suffer from poor device stability, low transconductance (g m ), and limited applications. In this study, a quasi-solid-state ion gel-gated vertical-type OECT (v-OECT) and NOT logic gate are successfully demonstrated by combining both p-type and n-type v-OECTs for the first time. Indacenodithiophene (IDT) polymers with alkyl (PIDTC16-BT) and oligoethylene glycol (O...

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Functional impact of gate dielectrics in emerging metal halide perovskite field-effect transistors

Nketia-Yawson,

2024

Materials Today Physics

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Influence of Gate Voltage Operation on Effective Mobility of Electrolyte-Gated Organic Transistors

Cited by 3 publications

References 33 publications

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter

Functional impact of gate dielectrics in emerging metal halide perovskite field-effect transistors

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