2006
DOI: 10.1088/0963-0252/15/3/031
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Influence of gas temperature on the loss mechanisms of H-atoms in a pulsed microwave discharge identified by time-resolved LIF measurements

Abstract: The present work deals with investigating the loss kinetics of atomic hydrogen in an H 2 /CH 4 pulsed microwave discharge used for diamond chemical vapour deposition. The temporal evolution of the hydrogen atom density, particularly in the afterglow phase, was investigated in order to determine the fundamental loss processes occurring in such discharge. Time resolved two-photon laser induced fluorescence (LIF) measurements of the relative concentration of H-atoms in the ground state and observed by H α transit… Show more

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Cited by 13 publications
(10 citation statements)
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“…This kind of study requires a good knowledge and good characterization of the plasma for two main reasons. The first one concerns the measurement of the loss coefficient in itself that can be badly estimated if effects such as gas temperature and neutral density variations are not well managed (Cartry et al 2006, Lamara et al 2006. Second, a key point in surface loss studies is the identification of the parameters playing a role on the surface loss coefficient.…”
Section: Resultsmentioning
confidence: 99%
“…This kind of study requires a good knowledge and good characterization of the plasma for two main reasons. The first one concerns the measurement of the loss coefficient in itself that can be badly estimated if effects such as gas temperature and neutral density variations are not well managed (Cartry et al 2006, Lamara et al 2006. Second, a key point in surface loss studies is the identification of the parameters playing a role on the surface loss coefficient.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the H temperature should be in the range between 3.5 eV and T g . Studies in different discharge types (mostly in microwave discharges) at considerably higher pressures (≥ 30 Pa) than in the present study have measured the atomic hydrogen temperature via line broadening in the range between 1000 and 3000 K 37,38,[40][41][42] . The measured atomic hydrogen temperatures were considerably lower than 3.5 eV but higher than the gas temperature.…”
Section: Equationmentioning
confidence: 76%
“…Many other ns-TALIF measurements of the H atom in plasmas are reported, e.g. in highly diluted SiH 4 -H 2 RF discharges that are used in thin-film deposition [118], in a large-scale microwave plasma reactor [119], in a pulsed microwave discharge [120], in a diamond-depositing DC arcjet [121], in a hydrogen gas flow into a wall-stabilized cascaded arc [122], in helicon plasmas [123], in ns-pulse discharges at a liquidvapor interface [93], in an Ar-O 2 -H 2 mixture excited by nspulse discharges [124], etc. Ns-TALIF suffers from rapid quenching (particularly in higher pressures) and photolytic interferences, as discussed earlier.…”
Section: Atomic Imaging In Low-pressure and Atmospheric-pressure Plasmasmentioning
confidence: 99%