Photocatalysts based
on semiconducting chalcogenides due to their
adaptable physio-chemical characteristics are attracting attention.
In this work, Bi-doped PbS (henceforth PbS:Bi) was prepared using
a straightforward chemical precipitation approach, and the influence
of γ-irradiation on PbS’s photocatalytic ability was
investigated. Synthesized samples were confirmed structurally and
chemically. Pb
(1–
x
)
Bi
x
S (
x
= 0, 0.005, 0.01, 0.02) samples
that were exposed to gamma rays showed fine-tuning of the optical
bandgap for better photocatalytic action beneath visible light. The
photocatalytic degradation rate of the irradiated Pb
0.995
Bi
0.005
S sample was found to be 1.16 times above that
of pure PbS. This is due to the occupancy of Bi
3+
ions
at surface lattice sites as a result of their lower concentration
in PbS, which effectively increases interface electron transport and
the annealing impact of gamma irradiation. Scavenger tests show that
holes are active species responsible for deterioration of the methylene
blue. The irradiated PbS:Bi demonstrated high stability after being
used repeatedly for photocatalytic degradation.