Influence of furnace design on the thermal stress during directional solidification of multicrystalline silicon

Fang, Haisheng; Wang, S.; Zhou, Lang; Zhou, Nan; Lin, Maohua

doi:10.1016/j.jcrysgro.2012.02.032

Cited by 54 publications

(33 citation statements)

References 17 publications

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“…Figure 4a shows the temperature according to the solidification of CdZnTe along the both liquid-solid state plotted as function of axial coordinate, where z = À0.01 m denotes the bottom tip of solid domain, and z = 0.20 m corresponds to both liquid and liquid states. This thermal profile is based on two linear segments designed to yield a gradient in the melt and a steeper cooling rate in the crystal [25]. And, the visualization of interface evolution denoted by the Figure 4b, proved that is increased with increasing time.…”

Section: Resultsmentioning

confidence: 98%

Numerical simulation of vertical Bridgman solidification of CdZnTe

Jamai

Pateyron

Sammouda

et al. 2014

Int. J. Simul. Multidisci. Des. Optim.

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-The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigated in the current study. The numerical approach is developed by using COMSOL Multiphysics software, which is based on finite elements method (FEM) with Arbitrary Lagrangian-Euleurian (ALE) formulation allowing treating the moving interface. Numerical aspects of different parameters that affect the solidification interface and present an important factor during the crystal growth's process are presented and analyzed. Especial attention will be paid to investigate the thermophysical properties such as thermal diffusivity, heat capacity. Thermal conductivity and the effect of thermal condition specially the effect of cold temperature T c which affects significantly the concavity and the convexity of the interface for specific ranges in the solidification of CdZnTe phenomena, but it is of great importance the crystal growth experts are not it given importance. It has been shown that this properties, the effect of T c , and the variation of interface velocity affect the solid/liquid interface shape and the crystal growth process.

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Section: Resultsmentioning

confidence: 98%

Numerical simulation of vertical Bridgman solidification of CdZnTe

Jamai

Pateyron

Sammouda

et al. 2014

Int. J. Simul. Multidisci. Des. Optim.

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“…The furnace uses a tapered heating element to establish a linear temperature profile Figure. 1(d) along the outer surface ampoule plotted as a function of dimensionless distance along the furnace axis, where z=-0.01 denotes the bottom tip of the ampoule and z=0.2 corresponds to the ampoule height Figure 1(b). This thermal profile is based on two linear segments designed to yield a gradient in the melt and a steeper cooling rate in the crystal [15][16][17][18].…”

Section: Methodsmentioning

confidence: 99%

“…However, The CdZnTe crystal suffers many defects, such as dislocation, striation, and impurities that significantly affect the final crystal quality. In fact, the generation of dislocation is related to thermal stresses induced by the inhomogeneous temperature distribution [10].…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

Jamai

Ganaoui

Sammouda

et al. 2015

ILCPA

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ABSTRACT. The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time's growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress' components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distribution of defects during solidification of CdZnTe

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“…How to improve the quality of silicon ingots produced by the DS process is a widespread research focus, and many experiments or simulations were used to determine and optimize the transport phenomena in the DS furnace to understand and control the DS process parameters, including heat transfer, mass transfer, solid-liquid (s/l) interface shape, flow effect (including the argon flow in the furnace and silicon melt flow in the crucible) and the thermal stresses of the polysilicon during crystallization [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%