Influence of Front-Side Ag Metallization on High Temperature and High Humidity Test of Crystalline Silicon PV Module

Semba, Taeko; Shimada, Taro; Fujita, Takayuki

doi:10.1109/pvsc40753.2019.8981218

Cited by 3 publications

(3 citation statements)

References 6 publications

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“…the EL dark area is found near the bus bars. [19][20][21][22] Studies have confirmed that tin exists near the finger metallization in the EL dark area. 20,21) Additionally, it was found that gaps were generated between the bulk silver and the glass of the finger metallization, and the glass was corroded on the mottle in the EL dark area.…”

Section: Introductionmentioning

confidence: 99%

“…[19][20][21][22] Studies have confirmed that tin exists near the finger metallization in the EL dark area. 20,21) Additionally, it was found that gaps were generated between the bulk silver and the glass of the finger metallization, and the glass was corroded on the mottle in the EL dark area. The change in these corrosion modes results from the difference in the composition of the glass frit contained in the metallization paste.…”

Section: Introductionmentioning

confidence: 99%

“…The change in these corrosion modes results from the difference in the composition of the glass frit contained in the metallization paste. 21) Specifically, the composition of the glass was changed from lead silicate (PbO-SiO 2 ) glass to lead tellurite (PbO-TeO 2 ) glass. 23) Currently, PbO-TeO 2 glass is widely used in the commercial front-side Ag metallization for p-type crystalline Si solar cell.…”

Section: Introductionmentioning

confidence: 99%

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Correlation between the metallization corrosion and acetic acid in crystalline silicon photovoltaic module

Semba¹

2020

Jpn. J. Appl. Phys.

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This study investigates the effect of corrosion of the metallization containing lead tellurite glass frit used in solar cells due to acetic acid. When the c-Si photovoltaic (PV) module is operating in the new degradation mode, the electroluminescence (EL) dark area showed an increase in the series resistance that spreads around the bus bars. To understand metallization corrosion, a high-temperature and high-humidity test was conducted using PV modules. The metallization was observed with a scanning electron microscope. Observation of the metallization of the degraded module confirmed the generation of voids and gaps near the interface between the metallization and the Si wafer in the EL dark area. It was also observed that Te and Pb were mostly eluted from the glass frit components in the metallization during the acetic acid leaching test. The results suggest that the elution of Te by the acetic acid generates voids and gaps in the metallization.

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