Influence of Formation and Decomposition of Solid Solution on Resistivity and Hillock Suppression in Sputtered Al-Ta Thin Films

栄治, 岩村; 隆, 大西; 一男, 吉川

doi:10.2320/jinstmet1952.59.6_673

Cited by 11 publications

(5 citation statements)

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“…In the past, a number of studies have focused on the binary aluminum alloys with transition elements and rare-earth elements as alloying additions for potential usage in the TFT-LCDs [6][7][8][9][10][11][12] . While some of the transition element containing binary aluminum alloys showed improved hillock resistance and low resistivity properties, they failed to offer completely hillock-free films in annealed state.…”

Section: Introductionmentioning

confidence: 99%

A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

Sarkar¹,

Huang

Wang

et al. 2009

Sci. China Ser. E-Technol. Sci.

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In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95-2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satisfactory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.co-sputtering, thin films, aluminum alloys, displays

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Section: Introductionmentioning

confidence: 99%

A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

Sarkar¹,

Huang

Wang

et al. 2009

Sci. China Ser. E-Technol. Sci.

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“…Recently, large size of the panel with high precision has been desired for LCD, and aluminium and its alloy films have been used for improving the signal delay caused by high electric resistivity of wiring materials [1][2][3]. Aluminium is a low melting point metal, and the formation of hemispheric hillocks caused by the thermal history including the production process of Al wiring become a subject of discussion [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Determination of standard entropy of formation of Al11Nd3 by heat capacity measurement from near absolute zero Kelvin

Yamamoto

Morishita

Kusumoto

2007

Journal of Alloys and Compounds

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“…[1][2][3] Particularly, the Al-Nd alloy film has been put into practical use as a wiring material 1) since it has higher heat resistance than Al, with a comparatively low increase in electric resistivity due to Nd addition. Furthermore, the Al-Nd binary system itself is of great interest from the viewpoint of the electron theory; this is because this system is composed of Al electrons that are spread over the crystal in a manner identical to nearly free electrons in pure aluminum and strongly localized and spinpolarized Nd-4f electrons.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Properties of AlNd Determined by Low Temperature Heat Capacity Measurements

et al. 2007

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The thermodynamic properties of AlNd were investigated by measuring the heat capacity, C p , from near absolute zero (2 K) to 300 K using the relaxation method. During the measurement of the C p (AlNd), 4 thermal anomalies were found on the C p curve at 75.34, 39.79, 25.77, and 6.95 K. The third law entropy of AlNd at 298 K was obtained by integrating the polynomials for the measured C p values. The result was as follows:Using this value, the standard entropy of formation at 298 K was obtained as follows:

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Influence of Formation and Decomposition of Solid Solution on Resistivity and Hillock Suppression in Sputtered Al-Ta Thin Films

Cited by 11 publications

References 0 publications

A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

Determination of standard entropy of formation of Al11Nd3 by heat capacity measurement from near absolute zero Kelvin

Thermodynamic Properties of AlNd Determined by Low Temperature Heat Capacity Measurements

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