Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode

Maurya, Vishwajeet; Buckley, J.; Alquier, Daniel; Haas, Helge; Irekti, Mohamed-Reda; Kaltsounis, Thomas; Charles, Matthew; Rochat, N.; Sonneville, Camille; Sousa, V.

doi:10.1016/j.mee.2023.111975

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…AlGaN/ GaN HEMTs operate in D-mode (depletion mode), which is a normally-on operation mode, as well as E-mode (enhancement mode), which is a normally-off operation mode. In recent years, numerous methods are being investigated, such as recessed gates [3], p-GaN gates [4,5], fluorine implantation [6], and cascade design [7] to achieve normally-off operation of GaN HEMTs. Depending on the application, normally-on or normally-off GaN HEMTs are used.…”

Section: Introductionmentioning

confidence: 99%

Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance

Hidayat,

Usman

2024

Eng. Res. Express

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Theoretical studies are conducted on varying barrier thicknesses in GaN/AlGaN HEMTs, as well as the effect of temperature fluctuation on device functionality. Structures A, B, C, D and E are designed each with barrier thickness 16 nm, 19 nm, 22 nm, 25 nm, and 28 nm respectively. A theoretical model is explained that helps to understand the impacts of barrier thickness variation on surface barrier height, strain relaxation and 2DEG concentration. The concept is further expanded to include the GaN HEMT's drain and transfer properties. Investigations are also done on how different thermal impacts affect the functionality of the device. We contemplate alloy disorder, interfaceroughness (IFR) as well as polar-optical phonon scattering. At elevated temperatures, the polar-optical phonon dispersion is the predominant process. Yet, at lower temperatures, the IFR and alloy disorder dispersion both satisfactorily account for the reported mobilities.

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Section: Introductionmentioning

confidence: 99%

Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance

Hidayat,

Usman

2024

Eng. Res. Express

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“…First-principle defect calculations carried out within the density functional theory (DFT) [ 27 , 28 ] indicate that the dominant defect configuration of F is negatively charged interstitial

with the lowest formation energy in n-GaN whereas

is the dominant defect in p-GaN. In vertical GaN devices, this property of F has been utilized to improve the BV by spreading the electric field away from the contact edge [ 29 , 30 , 31 , 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

Maurya,

Alquier,

El Amrani

et al. 2024

Micromachines

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This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Sentaurus TCAD simulations in order to determine the optimum fixed negative charge concentration required to achieve the highest BV. The simulated structure consisted of a Schottky diode with a box consisting of negative fixed charges to achieve the edge termination of the Schottky device. An empirical equation is proposed to determine the optimum fixed charge concentration for the highest BV based on depth. The simulation also considered implantation profiles derived from SIMS data from an actual device implanted with multi-energy and multi-dose F. It is demonstrated that the BV has a similar dependence on the key parameters like in the box profile. In summary, this work provides valuable insights into optimizing edge termination techniques using negative fixed charge for improved BV in vertical GaN power devices.

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“…New metallization schemes or advanced field plate structures have been proposed to reduce the leakage current in vertical Schottky diodes on homoepitaxial GaN epilayers. [16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Greco

Fiorenza

Schilirò

et al. 2023

Microelectronic Engineering

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Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode

Cited by 3 publications

References 15 publications

Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance

Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

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