Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Wang, Pengfei; Ma, Xiaohua; Mi, Minhan; Zhang, Meng; Zhu, Jiejie; Zhou, Yuwei; Wu, Sheng; Liu, Jielong; Yang, Ling; Hou, Bin

doi:10.1109/ted.2021.3062561

Cited by 26 publications

(10 citation statements)

References 29 publications

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“…22,23 The f , T f max values of 80 nm gate length were plotted as a function of gate bias in Fig. 8d, both f T and f max reduce with the reduction of V G beyond their peak position and the improvement of linearity can be achieved by introducing the fin-like HEMTs 24 or the planar nanostrip channels under the gate. 25…”

Section: Resultsmentioning

confidence: 99%

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

Lee,

Hieu,

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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In this study, AlGaN/GaN high electron mobility transistor (HEMT) with different interlayer thicknesses of Al0.07Ga0.93N were grown by metal-organic chemical vapour deposition (MOCVD) is investigated. The AlGaN/GaN HEMTs have the same device’s structure, with the Al0.07Ga0.93N interlayer thickness varied from 0 to 800 nm. All of the samples demonstrate high crystal quality in the GaN channel, with low dislocation density of (1.34–3.81) × 109 cm−2 and low AFM surface roughness of 0.27–0.39 nm. The heterostructure with an interlayer exhibits better mobility (1750 cm2 V∙s−1) compared to the structure without an interlayer (1610 cm2 V∙s−1). Furthermore, the interlayer improves breakdown voltage, and reduces insertion loss. The DC characteristics show that the 300 nm-thick Al0.07Ga0.93N is beneficial in improving leakage current and iso-breakdown voltage up to 450 V at a spacing of 10 μm. The insertion loss reduces to –0.75 dB mm−1 compared to the structure without an interlayer. The device with a 300 nm-thick Al0.07Ga0.93N interlayer exhibits the potential of RF, including a measured transconductance of 440 mS∙mm−1 and cutoff frequencies of f T / f max = 48/96 GHz at a given bias point.

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Section: Resultsmentioning

confidence: 99%

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

Lee,

Hieu,

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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“…For the detailed information of planar HEMT, recess-gate HEMT and Fin-like HEMT is described in our previous work. [22] G SiN AlGaN GaN 1 Significantly, for the DVC-HEMT as shown in Fig. 2(b), after removing the SiN in the gate region, a second EBL lithography was employed to define slant recess.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

“…Additionally, we have recently proposed a novel architecture with transconductance plateau > 5.6 V by tailoring a flat G m profile. [22] Such structures have been proven to be able to effectively suppress the G m roll-off at high drain current and thus enhance the linearity. However, the off-state current induced by etching is deteriorated about 2 orders compared with conventional planar HEMT, which severely impedes device reliability and deteriorates power efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…[23] It has been found that the plasma treatment such as N 2 O can effectively suppress the leakage current. [24][25][26] In this work, we optimized the structure reported in our previous work [22] by connecting different V th values including the slant recess element and planar element in parallel along the gate width with N 2 O plasma treatment on the gate region. The architecture of such scheme is named as double-V th coupling-HEMT (DVC-HEMT).…”

Section: Introductionmentioning

confidence: 99%

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High linearity AlGaN/GaN HEMT with double-V _th coupling for millimeter-wave applications

Wang

Zhang

et al. 2022

Chinese Phys. B

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We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V th) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f T/f max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P 1 dB) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

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“…I N recent years, FinFETs have become the gold standard in the electronic industry due to their superior properties in comparison to conventional FETs [1], [2]. Their trigate nature suppresses the short channel effects [3], which consequently improves the device transconductance, reduces its leakage current and enhances the device scalability [4]- [6]. AlGaN/GaN FinFETs have the potential to further supplement FET development owing to their improved 2DEG characteristics and temperature stability [7]- [9].…”

Section: Introductionmentioning

confidence: 99%

A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

Memon

Ahmed

2021

IEEE Access

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This paper presents a comprehensive I − V model for the evaluation of above threshold DC characteristics of trigate AlGaN/GaN FinFETs for both depletion and inversion mode of operations. For the depletion mode, 2DEG carrier concentration, n s , is evaluated considering the trigate geometry of the device, which is then used to assess drain current (I 2D ) for both the linear as well as the saturation region of operations. At a relatively higher gate bias, where the 2DEG is fully un-depleted, a significant rise in the drain current is observed which is associated with the creation of two additional side channels in the GaN layer of AlGaN/GaN FinFET, caused by the inversion of carriers. This component of the drain current, referred to as inversion current (I inv ), is modeled using the solution of a 2D Poisson equation. The total current (I ds ) is the summation of both the depletion as well as the inversion currents (I ds = I inv + I 2D ). The developed technique is validated using experimental data and is seen to exhibit a good degree of accuracy. Therefore, the proposed model could serve as a useful tool to predict AlGaN/GaN FinFETs output and transfer characteristics.

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Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Cited by 26 publications

References 29 publications

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

High linearity AlGaN/GaN HEMT with double-V _th coupling for millimeter-wave applications

A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

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Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Cited by 26 publications

References 29 publications

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al0.07Ga0.93N as Interlayer for High RF Applications

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al0.07Ga0.93N as Interlayer for High RF Applications

High linearity AlGaN/GaN HEMT with double-V th coupling for millimeter-wave applications

A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

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Product

Resources

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High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications

High linearity AlGaN/GaN HEMT with double-V _th coupling for millimeter-wave applications