Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Голосов, Д. А.; Vilya, N.; Zavadski, S. M.; Мельников, С. Н.; Avramchuk, A. V.; Grekhov, M. M.; Каргин, Н. И.; Komissarov, I.

doi:10.1016/j.tsf.2019.137517

Cited by 12 publications

(7 citation statements)

References 36 publications

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“…One of main reasons should be attributed to the use of thin high-κ HfO 2 (10 nm, κ ≈ 10) as a gate oxide. The relative dielectric constant (∼10) for the 10-nm-thick HfO 2 was extracted from capacitance–frequency ( C - f ; see Figure S6 in the Supporting Information) analysis of metal–insulator–metal capacitor (MIM), which is much lower than that of the bulk HfO 2 (κ ≈ 25), because of the size effects or dead layer effect. − It corresponds to the equivalent oxide thickness (EOT, which is defined as EOT = t high‑κ (κ SiO 2 /κ high‑κ )) value of 3.9 nm, which secures the acceptable low leakage current (<10 –13 A/μm). Note that the physical thickness (10 nm) of HfO 2 ensured low gate leakage currents less than ∼10 –12 A for all devices, even with the low EOT values of 3.9 nm (see Figure S3 in the Supporting Information).…”

Section: Results and Discussionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Results and Discussionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…This decrease is not surprising, since the dielectric constant of such a material undergoes a dramatic reduction as the film thickness is decreased to a few nanometres [41]. The reason for this phenomenon is usually ascribed to the size effect, especially pronounced in ultra-thin film, and determined by the polarisation, which brings to a reduction of the effective dielectric constant; furthermore, this decrease is more remarkable for larger values of the bulk dielectric constant [45][46][47].…”

Section: Resultsmentioning

confidence: 98%

Quantum tunnelling in hafnia-based metal-insulator-metal diodes: atomistic-to-continuum modelling approach and experimental validation

Pavoni,

Laudadio,

Joseph

et al. 2024

Phys. Scr.

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In this work, we present a metal-insulator-metal (MIM) diode, based on quantum tunnelling phenomena. Its model is based on a multilevel modelling approach consisting of atomistic and continuum simulations, fully validated by extensive measurements. The MIM structure comprises a hafnium oxide (or hafnia, HfO2) dielectric layer, less than 4 nm thick and a square contact area of only 4 μm2, placed between two metallic electrodes, namely platinum as the source and titanium as the drain. The current-voltage (I-V) curve has been estimated by Density Functional Theory (DFT) calculations through an optimisation of the interfaces between metals and monoclinic HfO2. The dielectric parameters arising from ab initio computations have then been used as inputs for the successive circuit and electromagnetic simulations. Finally, the multilevel model has been validated with great accuracy, first measuring the I-V characteristics by applying a drain-source voltage between -1 V and +1 V, and then extracting the scattering parameters up to 40 GHz, thus demonstrating that DFT and circuit/electromagnetic simulations match almost perfectly the experimental ones. These outcomes represent the first study of such nanoscale devices investigated by means of a rigorous atomistic-to-continuum approach, providing invaluable information in order to improve fabrication and correctly assess the macroscale performance of nanoelectronics systems.

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“…The results are similar to the previous work in other materials. 23,24) It is apparently seen in Fig. 3(c) that the real parts of the complex dielectric constants in photo energy of 1.5-5.3 eV are decreased with reducing film thickness.…”

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confidence: 89%

Dielectric function and band gap modulation in perovskite SrRuO₃ thin film

Zhang¹,

Zhou²,

Duan³

2021

Appl. Phys. Express

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An effective method for studying the relationship of dielectric functions and thickness in perovskite SrRuO 3 (SRO) thin film was proposed by spectroscopic ellipsometry measurement. A wedge-shaped SRO film with various thickness was prepared on SrTiO 3 substrate by pulse laser deposition, whose dielectric functions and thickness were obtained by using the Drude-Lorentz dispersive model. The acquired band gap is slightly enhanced with film thickness reducing due to the one-dimensional quantum confinement effect and the disorder effect. The proposed method is expected to be applied for dielectric modulation in perovskite photonic device.

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Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Cited by 12 publications

References 36 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Quantum tunnelling in hafnia-based metal-insulator-metal diodes: atomistic-to-continuum modelling approach and experimental validation

Dielectric function and band gap modulation in perovskite SrRuO₃ thin film

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Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Cited by 12 publications

References 36 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Quantum tunnelling in hafnia-based metal-insulator-metal diodes: atomistic-to-continuum modelling approach and experimental validation

Dielectric function and band gap modulation in perovskite SrRuO3 thin film

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Dielectric function and band gap modulation in perovskite SrRuO₃ thin film