This work demonstrates the significance of defect engineering in tuning the visible-light-driven photoelectrochemical property of alkali metal (Li, Na, and K) doped ZnO nanorods. The large concentration of oxygen vacancies introduced into the subbandgap, because of alkali metal doping, serve as the lightabsorbing donor sites and also photoelectron recombination centers, resulting in the enhanced photocurrent and hole separation in the valance band. The lattice strain developed in the nanorods, owing to doping, contributes to the easy electron transportation and mobility. Defect engineering also tunes the electronic structure of photoanodes, resulting in bandgap modification and band edge engineering, boosting chargecarrier migration and reduced electronÀhole pair recombination for enhanced oxygen evolution. measurements were carried out with an aqueous electrolytic solution of 0.5 M Na 2 SO 4 , having pH 6.5. The linear sweep voltametry (LSV) measurement for each of the as prepared NRs samples was performed within a voltage range of 1.4 to 0 V vs. Ag/ AgCl, at a scan rate of 100 mV s À1 with chopped visible light illumination (wavelength > 420 nm and intensity 10 mW cm À2 ). Each photoswitching activity was measured at an applied bias of 0.5 V vs. Ag/AgCl. The Mott-Schottky (MS) measurements were performed in a potential range of À0.8 V to 0.2 V vs. NHE at the frequency of 1 kHz and 5 kHz.