Abstract:Abstract:The doping concentration in the base of npn SiGe HBTs operating at low temperatures should be high to prevent carrier freeze-out and to assure low base resistance. As a consequence, the majority carrier concentration in the base is determined with Fermi-Dirac statistics. The influence of Fermi-Dirac statistics on collector current of npn SiGe HBTs at low temperatures is analyzed in this work. It is shown that taking Fermi-Dirac statistics into account instead of Boltzmann statistics results in lower c… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.