Influence of external perturbations on the behaviour of stationary electrical domains in gold-doped n-type Ge

Abstract

The response of a domain-containing sample of gold-doped n-type Ge t o a weak sinusoidal or rectangular electrical perturbation, a rectangular optical pulse (extrinsic excitation), or a constant transverse magnetic field are studied. It is shown the equivalent circuit consists of the voltage-dependent active resistance Zl( U ) and capacity C( U ) put in series. A possible explanation of the measured dependence Z,( V ) is proposed. The influence of a constant transverse magnetic field on the domain velocity and on the critical values of the electrical field and the current for the instability are investigated. It is shown that the domain is tilted in the magnetic field. The tilting angle is equal t o the Hall angle in weak electrical field outside the domain. HccnenoBaHa peaKuuH o6paaqa n-Ce c ~O J I O T O M c c@opMnpoBaslumcrr anerc~pa-YeCKUM AOMeHOM Ha CAaGLlU IIepeMeHHblB 3.XeKTpHYeCKMfi CWrHaJl CUHyCOUnaJlbHO# MJIW IlpHMOyrOJIbHOfi [POPMbl, UIITMqeCKMfi npflM0JTOJbHbIfi CUrHaJI C BO36Y)K-ReHIleM B 06nacl.n npHMeCHO# @OTOnpOBO~UMOCTW, Ha IIOCTORHHOe MWHHTHOe nOae. nOKa3aH0, 'IT0 3KBHBaJleHTHaR CXeMa o6paaua C AOMeHOM B UCCJIenOBaHHOM Odpa3Ire MOWeT 6blTb npenCTaBJIeH0 K;IK IIeIII, IIOCJIeROBaTeJIbHO COeAUHElIHblX aKTWBHOrO COIIPOTWBJIeHAH z,( u) 1% eMKOCTW c( u), 3aBIiCHURX OT IIOCTOHHHOrO 3aBWCAMOCTW z1( u). MCCJIeZOBaHO BJIklRHWe MarlIWTHOrO IIOJIR Ha KpMTU~eCKWe 06HaPYmeIl0, YTO B Mar' LiUTHOM none JiOMeH IIaKJlO-Hanprrmemrr Ha 06paaite. JIpenJraraeTcrr B O~M O W H O~ 06-brrc~e~ue ~a~e p e r r~o u BenmmbI 3 n e~~p n~e c~o r o n o m II ToiEa nnrr Iiatiana HeycToit~smocTM M Ira CKO-HHeTCH Ha yro.?, pambrii yr.iy Xoma B c n a 6 o~ 3JleIiTPW' leCKOM none m e DnMeHa.POCTb RBMXZeHUH AOMekIa.

Domain instability in p-Ge⟨Au⟩ in a nonlinear regime

“…The portion of the characteristic, which is plotted by a double line, represents the region of current oscillations. According to the theory and experimental data [6][7][8][9][10][11][12][13][14], the oscillations generated in the sample can be accounted for by the periodic appearance, motion and disintegration at a contact of high-electric-field domains. A study of the field distribution along the sample demonstrated that in p-Ge(Au), in contrast to n-Ge(Au), a high-field domain is always generated at the anode and moves towards the cathode.…”

“…The recombination current instability, first reported by Stafeev [5] and Bonch-Bruevich and Kalashnikov [6][7][8], has been studied in sufficient detail in Au-doped n-Ge, a typical nonlinear system, in the temperature range 16-35 K. This type of instability has also been studied in other Ni-and Mn-doped materials [9][10][11][12][13][14].…”