Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

Charrier, Joël; Alaiwan, Vincent; Pirasteh, Parastesh; Najar, Adel; Gadonna, Michel

doi:10.1016/j.apsusc.2007.04.056

Cited by 33 publications

(24 citation statements)

References 21 publications

(27 reference statements)

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“…The porosity varies between 30% and 69% and the refractive index varies between 3 and 1.58 when current densities vary from 20 to 180 mA/cm 2 . Some previous studies showed that an increase of current density causes both porosity and thickness to rise [17] which is in agreement with our examinations. According to Fig.…”

Section: Resultssupporting

confidence: 95%

Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

Seba

Hadjersi

Zebbar

2015

Applied Surface Science

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Section: Resultssupporting

confidence: 95%

Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

Seba

Hadjersi

Zebbar

2015

Applied Surface Science

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“…Nevertheless, this large surface area makes PSi chemically unstable, and its oxidation is a common natural process. In fact, the storage of PSi samples in ambient air makes important changes in its electrical and optical properties [8,9]. Porous materials can be thermally oxidized through different methods [10].…”

Section: Introductionmentioning

confidence: 99%

Oxygen Absorption in Free-Standing Porous Silicon: A Structural, Optical and Kinetic Analysis

2010

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Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. In this paper, we study the thermal oxidation of p+-type free-standing PSi fabricated by anodic electrochemical etching. These free-standing samples were characterized by nitrogen adsorption, thermogravimetry, atomic force microscopy and powder X-ray diffraction. The results show a structural phase transition from crystalline silicon to a combination of cristobalite and quartz, passing through amorphous silicon and amorphous silicon-oxide structures, when the thermal oxidation temperature increases from 400 to 900 °C. Moreover, we observe some evidence of a sinterization at 400 °C and an optimal oxygen-absorption temperature about 700 °C. Finally, the UV/Visible spectrophotometry reveals a red and a blue shift of the optical transmittance spectra for samples with oxidation temperatures lower and higher than 700 °C, respectively.

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“…According to the results extracted by fitting the experimental spectra, the values of the n H and n L , as well as of the k H and k L are lower and they are associated with the high porosity of the H and L layers in relation to the devices PSPC1 and PSPC2. According to the results reported by many authors [28][29][30], the low extinction coefficient is mainly associated with the low interface roughness observed in highporosity layers, as well as to the absence of a porosity gradient at the H/L interface [14].…”

Section: Optical Characterizationmentioning

confidence: 82%

Optical characterization of one-dimensional porous silicon photonic crystals with effective refractive index gradient in depth

Huanca

Salcedo

2015

Phys. Status Solidi A

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In this paper, we report the results of the investigation about the optical properties of one‐dimensional photonic crystals based on porous silicon multilayer structures having unit cells with optical properties that vary as a function of the device thickness. These devices were obtained by anodizing crystalline silicon in electrolyte aqueous solution of HF at different concentrations. The effective refractive index and extinction coefficients, of porous silicon layers of unit cells had been obtained by fitting the experimental reflectance spectra using the transfer matrix method. The effective–refractive indexes, for devices obtained in electrolyte solution of high HF concentration, were shown to have a significant gradient in the depth of the layers, whereas it was low (negligible) for devices obtained in electrolyte solution with low HF concentration, but the mechanical stability of these latter devices is poor. It was found that this fragility depends on the layer number and upon their physical thicknesses ratio.

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Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

Cited by 33 publications

References 21 publications

Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

Oxygen Absorption in Free-Standing Porous Silicon: A Structural, Optical and Kinetic Analysis

Optical characterization of one-dimensional porous silicon photonic crystals with effective refractive index gradient in depth

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