Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

Volovlikova, Olga; Gavrilov, Sergey; Lazarenko, Petr; Kukin, A. V.; Дудин, А. А.; Tarhanov, A.K.

doi:10.4028/www.scientific.net/kem.806.24

Cited by 6 publications

(4 citation statements)

References 18 publications

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“…Ni-assisted chemical etching can also be used to fabricate black silicon materials. The researchers optimized the process steps by studying factors such as different etching time, different UV light illumination [ 59 ], and different etching solution ratios [ 60 , 61 ].…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

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Section: Fabrication Techniquesmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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“…Tang D. and co-authors showed that porosity of cathode diffusion layer has a significant effect on the oxygen mass transfer and removal of liquid water in direct ethanol fuel cell [15]. The porosity and specific surface area of porous silicon depend on a few parameters: the type of conductivity and resistivity of the silicon wafer [16,17], the composition and temperature of the electrolyte for etching [18,19], the illumination of the reaction zone [20,21] and metal composition deposed on Si [22]. The influence of these parameters is intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Volovlikova¹,

Shilyaeva²,

Silakov³

et al. 2022

Nanotechnology

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In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary. This paper shows that the uniform macro-porous layers with a thickness of 125.5–171.2 μm and a specific surface area of the mesopore sidewalls of 142.5–182 m2·g−1 are formed on the Si with a specific resistivity of 0.01 Ω·cm. The gradient macro-porous layers with a thickness of 220–260 μm and 210–290 μm, the specific surface area of the mesopore sidewalls of 3.7–21.7 m2·g−1 and 17–29 m2·g−1 are formed on the silicon with a specific resistivity of 1 and 12 Ω·cm, respectively. The por-Si/Au has excellent low-temperature electro oxidation performance with ethanol, the activity of ethanol oxidation is mainly due to the synergistic effect of the Au nanoparticles and porous Si. The formation mechanism of the uniform and gradient macro-porous layers and ethanol electro-oxidation on the porous/filament silicon, decorated with Au nanoparticles, was established. The por-Si/Au structures with perpendicularly oriented pores, a high por-Si layer thickness, and a low mono-Si layer thickness (with a specific resistivity of 1 Ω·cm) are optimal for an effective ethanol electro-oxidation, which has been confirmed with chronoamperometry measurements.

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Section: Introductionmentioning

confidence: 99%

“…MACE is used for creating BSi micro-or nanotextured surface using metal nanoparticles as a catalyst, such as gold (Au) [14][15][16], silver (Ag) [17], aluminum (Al) [18], copper (Cu) [19], and nickel (Ni) [20]. The BSi surface texturing occurs when the Si surface is etched with chemical oxidizing agents such as H 2 O 2 and HF in the presence of the abovementioned metal nanoparticles [20]. The first use of the MACE method was demonstrated by Malinovska et al (1997) when a porous Si was fabricated by etching the Si substrate with Al nanoparticles in the presence of oxidizing agents including HF, HNO 3, and H 2 O [21].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review

et al. 2021

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The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.

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Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

Cited by 6 publications

References 18 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review

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