Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

Bagolini, Alvise; Faes, A.; Decarli, M.

doi:10.1109/jmems.2010.2067436

Cited by 10 publications

(13 citation statements)

References 35 publications

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“…A pattern formed of two adjoined symmetrical parallelograms, which shared one side along a <100> crystallographic direction, was analyzed. The etched convex corners of the pattern represent the free end of convex corner compensation bounded by {100} and {311} planes [15][16][17][18]. Convex corner compensations formed as the <100> beams for the etching of square or rectangular patterns with sides along <110> crystallographic directions can be related with parallelograms in the case of n = 3.…”

Section: Resultsmentioning

confidence: 99%

“…Convex corners of the island patterns in the masking layer can be distorted during etching. The fabrication of complex 3D silicon structures requires knowledge of the mechanisms behind the evolution of convex corner compensation during etching [14][15][16][17][18][19][20][21][22][23][24]. Appropriate convex corner compensation depends on the design of the 3D silicon structure.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the results were obtained for the etching of square or rectangular patterns in the masking layer with sides along <110> crystallographic directions. Additionally, convex corner compensation techniques for TMAH water solution etching have been developed for patterns with sides along <110> crystallographic directions [14][15][16][17][18][19][20][21][22][23][24]. The etching of a (100) silicon substrate in TMAH water solution using square, rectangular and octagonal mask patterns with sides along different crystallographic directions was explored in [9,27].…”

Section: Introductionmentioning

confidence: 99%

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Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

et al. 2020

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This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

et al. 2020

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“…Etched silicon structures are limited by various planes during etching in 25 wt % TMAH water solution at a temperature of 80 °C. Because of the differences in etch rates, some planes will appear, while others will disappear during etching [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24]. We performed our experiments for the etching depths of up to 300 µm.…”

Section: Introductionmentioning

confidence: 99%

“…During etching of these mesa structures, a severe convex corner undercutting appears. The convex corner compensation techniques for the TMAH water solutions etching are developed for the patterns with sides along <110> crystallographic directions [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. Additionally, etched circular patterns were compared for pure and surfactant added 25 wt % TMAH water solution [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

et al. 2019

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Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.

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Pre-buried mask wet etching for suspended silicon microstructures applied in rocking mass micro-gyroscope

Wang

Zhang

et al. 2017

Microsyst Technol

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Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

Cited by 10 publications

References 35 publications

Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

Pre-buried mask wet etching for suspended silicon microstructures applied in rocking mass micro-gyroscope

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